RB055L-60

Data Sheet

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© 2012 ROHM Co., Ltd. All rights reserved.

Schottky Barrier Diode

RB055L-60

lApplications

lExternal Dimensions(Unit : mm)

lLand Size Figure(Unit : mm)

General rectification

lFeatures

1)Small power mold type.(PMDS)

2)Low IR

3)High reliability

lConstruction

Silicon epitaxial

lStructure

lTaping Dimensions(Unit : mm)

lAbsolute Maximum Ratings(Ta=25°C)

Symbol

Unit

V

V

Io

A

A

Tj

°C

Tstg

°C

lElectrical Characteristics(Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

-

-

0.68

V

Reverse current

-

-

70

mA

Conditions

70

Parameter

Junction temperature

Storage temperature

150

(*1)Mounting on epoxi board. 180°Half sine wave

-55 to +150

Forward current surge peak (60Hz・1cyc)

Limits

60

3

60

Parameter

Reverse voltage (DC)

Average rectified forward current (*1)

Reverse voltage (repetitive)

4.0±0.1

2.9±0.1

4.0±0.1

2.0±0.05

φ 1.55±0.05

φ 1.55

0.3

2.8MAX

PMDS

2.0

ROHM : PMDS

JEDEC : SOD-106

Manufacture Date

1

2

0.1±0.02

　　　 0.1

2.6±0.2

2.0±0.2

1.5±0.2

2

1

6

9

1/4

2012.08 - Rev.A