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SST28VF040A-90-4C-EH Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST28VF040A-90-4C-EH Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 24 page ©2001 Silicon Storage Technology, Inc. S71077-04-000 6/01 310 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. SSF is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Data Sheet 4 Mbit (512K x8) SuperFlash EEPROM SST28SF040A / SST28VF040A FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST28SF040A – 2.7-3.6V for SST28VF040A • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Memory Organization: 512K x8 • Sector-Erase Capability: 256 Bytes per Sector • Low Power Consumption – Active Current: 15 mA (typical) for 5.0V and 10 mA (typical) for 2.7-3.6V – Standby Current: 5 µA (typical) • Fast Sector-Erase/Byte-Program Operation – Byte-Program Time: 35 µs (typical) – Sector-Erase Time: 2 ms (typical) – Complete Memory Rewrite: 20 sec (typical) • Fast Read Access Time – 5.0V-only operation: 90 and 120 ns – 2.7-3.6V operation: 150 and 200 ns • Latched Address and Data • Hardware and Software Data Protection – 7-Read-Cycle-Sequence Software Data Protection • End-of-Write Detection – Toggle Bit – Data# Polling • TTL I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts • Packages Available – 32-lead PLCC – 32-lead TSOP (8mm x 14mm and 8mm x 20mm) – 32-pin PDIP PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector- Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high perfor- mance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternative approaches. The SST28SF/VF040A erase and program with a single power supply. The SST28SF/ VF040A conform to JEDEC standard pinouts for byte wide memories and are compatible with existing industry stan- dard flash EEPROM pinouts. Featuring high performance programming, the SST28SF/ VF040A typically Byte-Program in 35 µs. The SST28SF/ VF040A typically Sector-Erase in 2 ms. Both Program and Erase times can be optimized using interface features such as Toggle bit or Data# Polling to indicate the completion of the Write cycle. To protect against an inadvertent write, the SST28SF/VF040A have on chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST28SF/ VF040A are offered with a guaranteed sector endurance of 10,000 cycles. Data retention is rated greater than 100 years. The SST28SF/VF040A are best suited for applications that require reprogrammable nonvolatile mass storage of pro- gram, configuration, or data memory. For all system appli- cations, the SST28SF/VF040A significantly improve performance and reliability, while lowering power consump- tion when compared with floppy diskettes or EPROM approaches. Flash EEPROM technology makes possible convenient and economical updating of codes and control programs on-line. The SST28SF/VF040A improve flexibil- ity, while lowering the cost of program and configuration storage application. The functional block diagram shows the functional blocks of the SST28SF/VF040A. Figures 1, 2, and 3 show the pin assignments for the 32-lead PLCC, 32-lead TSOP, and 32- pin PDIP packages. Pin descriptions and operation modes are described in Tables 2 through 5. Device Operation Commands are used to initiate the memory operation func- tions of the device. Commands are written to the device using standard microprocessor write sequences. A com- mand is written by asserting WE# low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. Note, during the Software Data Protection sequence the addresses are latched on the rising edge of OE# or CE#, whichever occurs first. SST28SF040A / SST28VF040A5.0 & 2.7 4Mb (x8) Byte-Program, Small Erase Sector flash memories |
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