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SST58SD048-70-C-P1H Datasheet(PDF) 10 Page - Silicon Storage Technology, Inc |
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SST58SD048-70-C-P1H Datasheet(HTML) 10 Page - Silicon Storage Technology, Inc |
10 / 40 page 10 Data Sheet ATA-Disk Chip SST58SD008 / 016 / 024 / 032 / 048 / 064 / 096 / 128 / 192 SST58LD008 / 016 / 024 / 032 / 048 / 064 / 096 / 128 / 192 ©2001 Silicon Storage Technology, Inc. S71167-05-000 9/01 391 2.3 Electrical Specification The following tables define all D.C. Characteristics for the SST ATA-Disk Chip product family. 2.3.1 Absolute Maximum Conditions Unless otherwise stated, conditions are for Commercial Temperature: Non-operating (storage) temperature range: -50°C to +100°C VDD = 4.5-5.5V VDD = 3.135-3.465V Ta = 0°C to +70°C ADC products shall operate correctly in both voltage ranges as shown in the tables above. To comply with this specification, current requirements must not exceed the maximum limit. 2.3.2 Input Leakage Current In the table below, x refers to the characteristics described in section 2.3.2. For example, I1U indicates a pull up resistor with a type 1 input characteristic. ABSOLUTE MAXIMUM CONDITIONS Parameter Symbol Conditions Input Power VDD -0.3V min. to 6.5V max. Voltage on any pin except VDD with respect to GND V -0.5V min. to VDD + 0.5V max. INPUT POWER Voltage Maximum Average RMS Active Current Maximum Average RMS Sleep Current Measurement Method 3.135-3.465V 75 mA 200 µA 3.3V at 25 °C1 1. Current measurement is accomplished by connecting an amp meter (set to the 2 amp scale range) in series with the VDD supply to the ADC. Current measurements are to be taken while looping on a data transfer command with a sector count of 128. Current consumption values for both Read and Write commands are not to exceed the Maximum Average RMS Current specified in this table. 4.5-5.5V 100 mA 300 µA 5.0V at 25 °C1 Type Parameter Symbol Conditions Min Typ Max Units IxZ Input Leakage Current IL VIH = VDD / VIL = Gnd -1 1 µA IxU Pull Up Resistor RPU1 VDD = 5.0V 50k 500k Ohm IxD Pull Down Resistor RPD1 VDD = 5.0V 50k 500k Ohm |
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