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SST29LF010-120-4I-WH Datasheet(PDF) 10 Page - Silicon Storage Technology, Inc |
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SST29LF010-120-4I-WH Datasheet(HTML) 10 Page - Silicon Storage Technology, Inc |
10 / 26 page 10 Data Sheet 2 Mbit Page-Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 ©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307 AC CHARACTERISTICS TABLE 10: READ CYCLE TIMING PARAMETERS FOR SST29EE020 Symbol Parameter SST29EE020-120 SST29EE020-150 Units Min Max Min Max TRC Read Cycle Time 120 150 ns TCE Chip Enable Access Time 120 150 ns TAA Address Access Time 120 150 ns TOE Output Enable Access Time 50 60 ns TCLZ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. CE# Low to Active Output 0 0 ns TOLZ1 OE# Low to Active Output 0 0 ns TCHZ1 CE# High to High-Z Output 30 30 ns TOHZ1 OE# High to High-Z Output 30 30 ns TOH1 Output Hold from Address Change 0 0 ns T10.4 307 TABLE 11: READ CYCLE TIMING PARAMETERS FOR SST29LE020 Symbol Parameter SST29LE020-200 SST29LE020-250 Units MinMax MinMax TRC Read Cycle Time 200 250 ns TCE Chip Enable Access Time 200 250 ns TAA Address Access Time 200 250 ns TOE Output Enable Access Time 100 120 ns TCLZ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. CE# Low to Active Output 0 0 ns TOLZ1 OE# Low to Active Output 0 0 ns TCHZ1 CE# High to High-Z Output 50 50 ns TOHZ1 OE# High to High-Z Output 50 50 ns TOH1 Output Hold from Address Change 0 0 ns T11.1 307 TABLE 12: READ CYCLE TIMING PARAMETERS FOR SST29VE020 Symbol Parameter SST29VE020-200 SST29VE020-250 Units MinMax MinMax TRC Read Cycle Time 200 250 ns TCE Chip Enable Access Time 200 250 ns TAA Address Access Time 200 250 ns TOE Output Enable Access Time 100 120 ns TCLZ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. CE# Low to Active Output 0 0 ns TOLZ1 OE# Low to Active Output 0 0 ns TCHZ1 CE# High to High-Z Output 50 50 ns TOHZ1 OE# High to High-Z Output 50 50 ns TOH1 Output Hold from Address Change 0 0 ns T12.1 307 |
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