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SST39SF010A-45-4I-WH Datasheet(PDF) 2 Page - Silicon Storage Technology, Inc |
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SST39SF010A-45-4I-WH Datasheet(HTML) 2 Page - Silicon Storage Technology, Inc |
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2 / 22 page  2 Preliminary Specification 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 ©2001 Silicon Storage Technology, Inc. S71147-02-000 5/01 398 low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. Read The Read operation of the SST39SF010A/020A/040 is controlled by CE# and OE#, both have to be low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high. Refer to the Read cycle timing diagram (Fig- ure 4) for further details. Byte-Program Operation The SST39SF010A/020A/040 are programmed on a byte- by-byte basis. Before programming, one must ensure that the sector, in which the byte which is being programmed exists, is fully erased.The Program operation consists of three steps. The first step is the three-byte-load sequence for Software Data Protection. The second step is to load byte address and byte data. During the Byte-Program operation, the addresses are latched on the falling edge of either CE# or WE#, whichever occurs last. The data is latched on the rising edge of either CE# or WE#, whichever occurs first. The third step is the internal Program operation which is initiated after the rising edge of the fourth WE# or CE#, whichever occurs first. The Program operation, once initiated, will be completed, within 20 µs. See Figures 5 and 6 for WE# and CE# controlled Program operation timing diagrams and Figure 15 for flowcharts. During the Program operation, the only valid reads are Data# Polling and Tog- gle Bit. During the internal Program operation, the host is free to perform additional tasks. Any commands written during the internal Program operation will be ignored. Sector-Erase Operation The Sector-Erase operation allows the system to erase the device on a sector-by-sector basis. The sector architecture is based on uniform sector size of 4 KByte. The Sector- Erase operation is initiated by executing a six-byte-com- mand load sequence for Software Data Protection with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The sector address is latched on the fall- ing edge of the sixth WE# pulse, while the command (30H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit methods. See Figure 9 for timing waveforms. Any commands written during the Sector- Erase operation will be ignored. Chip-Erase Operation The SST39SF010A/020A/040 provide Chip-Erase opera- tion, which allows the user to erase the entire memory array to the “1s” state. This is useful when the entire device must be quickly erased. The Chip-Erase operation is initiated by executing a six- byte Software Data Protection command sequence with Chip-Erase command (10H) with address 5555H in the last byte sequence. The internal Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the internal Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 4 for the command sequence, Figure 10 for timing diagram, and Figure 18 for the flowchart. Any commands written during the Chip- Erase operation will be ignored. Write Operation Status Detection The SST39SF010A/020A/040 provide two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system Write cycle time. The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled after the rising edge of WE# which ini- tiates the internal Program or Erase operation. The actual completion of the nonvolatile write is asynchro- nous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to con- flict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejec- tion is valid. Data# Polling (DQ7) When the SST39SF010A/020A/040 are in the internal Pro- gram operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. The device is then ready for the next operation. During internal Erase operation, any attempt to read DQ7 will produce a ‘0’. Once the internal Erase operation is completed, DQ7 will produce a ‘1’. The Data# Polling is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sec- |
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