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TPS54110-Q1 Datasheet(PDF) 18 Page - Texas Instruments

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Part No. TPS54110-Q1
Description  3-V TO 6-V INPUT, 1.5-A OUTPUT SYNCHRONOUS-BUCK PWM SWITCHER WITH INTEGRATED FETs (SWIFT)
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Maker  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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TPS54110-Q1 Datasheet(HTML) 18 Page - Texas Instruments

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TPS54110−Q1
SLVS837 − JULY 2008
www.ti.com
18
range of output L- and C-filter components to suit the
particular
application
needs.
Type-2
or
type-3
compensation
can
be
employed
using
external
compensation components.
PWM Control
Signals from the error-amplifier output, oscillator, and
current-limit circuit are processed by the PWM control
logic. Referring to the internal block diagram, the control
logic includes the PWM comparator, OR gate, PWM latch,
and portions of the adaptive dead-time and control-logic
block.
During
steady-state
operation
below
the
current-limit threshold, the PWM-comparator output and
oscillator pulse train alternately reset and set the PWM
latch. Once the PWM latch is set, the low-side FET
remains on for a minimum duration set by the oscillator
pulse duration. During this period, the PWM ramp
discharges rapidly to its valley voltage. When the ramp
begins to charge back up, the low-side FET turns off and
high-side FET turns on. As the PWM ramp voltage
exceeds the error-amplifier output voltage, the PWM
comparator resets the latch, thus turning off the high-side
FET and turning on the low-side FET. The low-side FET
remains on until the next oscillator pulse discharges the
PWM ramp.
During transient conditions, the error amplifier output
could be below the PWM ramp valley voltage or above the
PWM peak voltage. If the error-amplifier output is high, the
PWM latch is never reset and the high-side FET remains
on until the oscillator pulse signals the control logic to turn
the high-side FET off and the low-side FET on. The device
operates at its maximum duty cycle until the output voltage
rises to the regulation set-point, setting VSENSE to
approximately
the
same
voltage
as
Vref. If the
error-amplifier output is low, the PWM latch is continually
reset and the high-side FET does not turn on. The low-side
FET remains on until the VSENSE voltage decreases to
a range that allows the PWM comparator to change states.
The TPS54110 is capable of sinking current continuously
until the output reaches the regulation set-point.
If the current-limit comparator remains tripped longer than
100 ns, the PWM latch resets before the PWM ramp
exceeds the error-amplifier output. The high-side FET
turns off and low-side FET turns on to decrease the energy
in the output inductor, and consequently the output
current. This process is repeated each cycle that the
current-limit comparator is tripped.
Dead-Time Control and MOSFET Drivers
Adaptive
dead-time
control
prevents
shoot-through
current from flowing in both N-channel power MOSFETs
during the switching transitions by actively controlling the
turn-on times of the MOSFET drivers. The high-side driver
does not turn on until the gate-drive voltage to the low-side
FET is below 2 V. The low-side driver does not turn on until
the voltage at the gate of the high-side MOSFETs is below
2 V. The high-side and low-side drivers are designed with
300-mA source and sink capability to quickly drive the
power MOSFETs gates. The low-side driver is supplied
from VIN, while the high-side driver is supplied from the
BOOT pin. A bootstrap circuit uses an external BOOT
capacitor
and
an
internal
2.5-
Ω bootstrap switch
connected between the VIN and BOOT pins. The
integrated bootstrap switch improves drive efficiency and
reduces external-component count.
Overcurrent Protection
Cycle-by-cycle current limiting is achieved by sensing the
current flowing through the high-side MOSFET and
differential amplifier and comparing it to the preset
overcurrent threshold. The high-side MOSFET is turned
off within 200 ns of reaching the current-limit threshold. A
100-ns leading-edge blanking circuit prevents false
tripping of the current limit. Current-limit detection occurs
only when current flows from VIN to PH when sourcing
current to the output filter. Load protection during
current-sink operation is provided by thermal shutdown.
Thermal Shutdown
The device uses the thermal shutdown to turn off the power
MOSFETs and disable the controller if the junction
temperature exceeds 150
°C. The device is released from
shutdown when the junction temperature decreases to
10
°C below the thermal-shutdown trip point, and starts up
under control of the slow-start circuit. Thermal shutdown
provides protection when an overload condition is
sustained for several milliseconds. In a persistent-fault
condition, the device cycles continuously; starting up
under control of the soft-start circuit, heating up due to the
fault, and then shutting down upon reaching the
thermal-shutdown point.
Power Good (PWRGD)
The
power-good
circuit
monitors
for
undervoltage
conditions on VSENSE. If the voltage on VSENSE is 7%
below the reference voltage, the open-drain PWRGD
output is pulled low. PWRGD is also pulled low if VIN is
less than the UVLO threshold, or SS/ENA is low, or if
thermal shutdown asserts. When VIN
= UVLO threshold,
SS/ENA
= enable threshold, and VSENSE > 93% of Vref,
the open-drain output of the PWRGD pin is high. A
hysteresis voltage equal to 3% of Vref and a 35-µs
falling-edge deglitch circuit prevent tripping of the
power-good comparator due to high-frequency noise.


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