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5962R1121308V9A Datasheet(PDF) 11 Page - Intersil Corporation

Part # 5962R1121308V9A
Description  Rad-Hard, 5.0V/3.3V 關-Processor Supervisory Circuits
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

5962R1121308V9A Datasheet(HTML) 11 Page - Intersil Corporation

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ISL705AEH, ISL705BEH, ISL705CEH, ISL706AEH, ISL706BEH, ISL706CEH
11
FN8262.0
March 30, 2012
FIGURE 22. ISL705xEH tFPFI vs LOW DOSE RATE RADIATION
FIGURE 23. ISL706xEH IDD vs LOW DOSE RATE RADIATION
FIGURE 24. ISL706xEH VRST vs LOW DOSE RATE RADIATION
FIGURE 25. ISL706xEH VHYS vs LOW DOSE RATE RADIATION
FIGURE 26. ISL706xEH tRST vs LOW DOSE RATE RADIATION
FIGURE 27. ISL706xEH tWD vs LOW DOSE RATE RADIATION
Post Radiation Characteristics Unless otherwise specified, VDD = 4.75V to 5.5V for the ISL705AEH/BEH/CEH, VDD = 3.15V to 3.6V
for the ISL706AEH/BEH/CEH TA = +25°C. This data is typical mean test data post radiation exposure at a rate of <10mrad(Si)/s. This data is intended
to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
krad(Si)
BIASED
GROUNDED
300
325
350
375
400
0
25
50
75
100
125
150
krad(Si)
BIASED
GROUNDED
2.95
3.00
3.05
3.10
3.15
3.20
0
25
50
75
100
125
150
krad(Si)
BIASED
GROUNDED
0
10
20
30
40
50
60
0
25
50
75
100
125
150
krad(Si)
BIASED
GROUNDED
120
140
160
180
200
220
240
0
25
50
75
100
125
150
krad(Si)
BIASED
GROUNDED
1.0
1.2
1.4
1.6
1.8
2.0
0
25
50
75
100
125
150
krad(Si)
BIASED
GROUNDED


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