©2001 Silicon Storage Technology, Inc.

S71171-05-000

8/01

520

1

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF and ComboMemory are trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Data Sheet

FEATURES:

•

MPF + SRAM ComboMemory

– SST32HF802: 512K x16 Flash + 128K x16 SRAM

– SST32HF162: 1M x16 Flash + 128K x16 SRAM

– SST32HF164: 1M x16 Flash + 256K x16 SRAM

•

Single 2.7-3.3V Read and Write Operations

•

Concurrent Operation

– Read from or write to SRAM while

Erase/Program Flash

•

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

•

Low Power Consumption:

– Active Current: 15 mA (typical) for

Flash or SRAM Read

– Standby Current: 20 µA (typical)

•

Flexible Erase Capability

– Uniform 2 KWord sectors

– Uniform 32 KWord size blocks

•

Fast Read Access Times:

– Flash: 70 ns and 90 ns

– SRAM: 70 ns and 90 ns

•

Latched Address and Data for Flash

•

Flash Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 µs (typical)

– Chip Rewrite Time:

SST32HF802: 8 seconds (typical)

SST32HF162/164: 15 seconds (typical)

•

Flash Automatic Erase and Program Timing

•

Flash End-of-Write Detection

– Toggle Bit

– Data# Polling

•

CMOS I/O Compatibility

•

JEDEC Standard Command Set

•

Package Available

– 48-lead TSOP (12mm x 20mm)

– 48-ball TBGA (10mm x 12mm)

PRODUCT DESCRIPTION

The SST32HF802/162/164 ComboMemory devices inte-

grate a 512K x16 or 1M x16 CMOS flash memory bank

with a 128K x16 or 256K x16 CMOS SRAM memory bank

in a Multi-Chip Package (MCP), manufactured with SST’s

proprietary, high performance SuperFlash technology.

Featuring high performance Word-Program, the flash

memory bank provides a maximum Word-Program time of

14 µsec. The entire flash memory bank can be erased and

programmed word-by-word in typically 8 seconds for the

SST32HF802 and 15 seconds for the SST32HF162/164,

when using interface features such as Toggle Bit or Data#

Polling to indicate the completion of Program operation. To

protect against inadvertent flash write, the SST32HF802/

162/164 devices contain on-chip hardware and software

data

protection

schemes.The

SST32HF802/162/164

devices offer a guaranteed endurance of 10,000 cycles.

Data retention is rated at greater than 100 years.

The SST32HF802/162/164 devices consist of two inde-

pendent memory banks with respective bank enable sig-

nals. The Flash and SRAM memory banks are

superimposed in the same memory address space. Both

memory banks share common address lines, data lines,

WE# and OE#. The memory bank selection is done by

memory bank enable signals. The SRAM bank enable sig-

nal, BES# selects the SRAM bank. The flash memory

bank enable signal, BEF# selects the flash memory bank.

The WE# signal has to be used with Software Data Protec-

tion (SDP) command sequence when controlling the Erase

and Program operations in the flash memory bank. The

SDP command sequence protects the data stored in the

flash memory bank from accidental alteration.

The SST32HF802/162/164 provide the added functionality

of being able to simultaneously read from or write to the

SRAM bank while erasing or programming in the flash

memory bank. The SRAM memory bank can be read or

written while the flash memory bank performs Sector-

Erase, Bank-Erase, or Word-Program concurrently. All

flash memory Erase and Program operations will automati-

cally latch the input address and data signals and complete

the operation in background without further input stimulus

requirement. Once the internally controlled erase or pro-

gram cycle in the flash bank has commenced, the SRAM

bank can be accessed for read or write.

The SST32HF802/162/164 devices are suited for applica-

tions that use both flash memory and SRAM memory to

store code or data. For systems requiring low power and

small form factor, the SST32HF802/162/164 devices signif-

icantly improve performance and reliability, while lowering

power consumption, when compared with multiple chip

solutions. The SST32HF802/162/164 inherently use less

energy during erase and program than alternative flash

Multi-Purpose Flash (MPF) + SRAM ComboMemory

SST32HF802 / SST32HF162 / SST32HF164

SST32HF802 / 162 / 164MPF (x16) + 1Mb SRAM (x16) ComboMemories