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SST36VF1601-70-4C-BK Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST36VF1601-70-4C-BK Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 26 page ©2001 Silicon Storage Technology, Inc. S71142-06-000 11/01 373 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. Concurrent SuperFlash and CSF are trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Data Sheet 16 Mbit Concurrent SuperFlash SST36VF1601 FEATURES: • Organized as 1M x16 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection - SST36VF1601: 12 Mbit + 4 Mbit • Single 2.7-3.6V for Read and Write Operations • Superior Reliability – Endurance: 100,000 cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 25 mA – Standby Current: 4 µA • Hardware Sector Protection/WP# Input Pin – Protects 4 outermost sectors (4 KWord) in the larger bank by driving WP# low and unprotects by driving WP# high • Hardware Reset Pin (RST#) – Resets the internal state machine to reading array data • Sector-Erase Capability – Uniform 1 KWord sectors • Block-Erase Capability – Uniform 32 KWord blocks • Fast Read Access Time – 70 ns • Latched Address and Data • Fast Erase and Word-Program (typical): – Sector-Erase Time: 18 ms – Block-Erase Time: 18 ms – Chip-Erase Time: 70 ms – Word-Program Time: 14 µs – Chip Rewrite Time: 8 seconds • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling – Ready/Busy# pin • CMOS I/O Compatibility • Conforms to Common Flash Memory Interface (CFI) • JEDEC Standards – Flash EEPROM Pinouts and command sets • Packages Available – 48-lead TSOP (12mm x 20mm) – 48-ball TFBGA (8mm x 10mm) PRODUCT DESCRIPTION The SST36VF1601 is 1M x16 CMOS Concurrent Read/ Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST36VF1601 writes (Program or Erase) with a 2.7-3.6V power supply. The SST36VF1601 device conforms to JEDEC standard pinouts for x16 memories. Featuring high performance Word-Program, the SST36VF1601 device provides a typical Word-Program time of 14 µsec. The devices use Toggle Bit or Data# Poll- ing to detect the completion of the Program or Erase opera- tion. To protect against inadvertent write, the SST36VF1601 device has on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST36VF1601 device is offered with a guaranteed endur- ance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST36VF1601 is suited for applications that require convenient and economical updating of program, configu- ration, or data memory. For all system applications, the SST36VF1601 significantly improves performance and reli- ability, while lowering power consumption. The SST36VF1601 inherently uses less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, cur- rent, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to pro- gram and has a shorter erase time, the total energy con- sumed during any Erase or Program operation is less than alternative flash technologies. The SST36VF1601 also improves flexibility while lowering the cost for program, data, and configuration storage applications. SST36V160116Mb (x16) Concurrent SuperFlash |
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