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SST36VF1601-70-4C-BK Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc

Part # SST36VF1601-70-4C-BK
Description  16 Mbit Concurrent SuperFlash
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Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST36VF1601-70-4C-BK Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc

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©2001 Silicon Storage Technology, Inc.
S71142-06-000
11/01
373
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
Concurrent SuperFlash and CSF are trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
16 Mbit Concurrent SuperFlash
SST36VF1601
FEATURES:
Organized as 1M x16
Dual Bank Architecture for Concurrent
Read/Write Operation
– 16 Mbit Bottom Sector Protection
- SST36VF1601: 12 Mbit + 4 Mbit
Single 2.7-3.6V for Read and Write Operations
Superior Reliability
– Endurance: 100,000 cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption:
– Active Current: 25 mA
– Standby Current: 4 µA
Hardware Sector Protection/WP# Input Pin
– Protects 4 outermost sectors (4 KWord) in the
larger bank by driving WP# low and unprotects
by driving WP# high
Hardware Reset Pin (RST#)
– Resets the internal state machine to reading
array data
Sector-Erase Capability
– Uniform 1 KWord sectors
Block-Erase Capability
– Uniform 32 KWord blocks
Fast Read Access Time
– 70 ns
Latched Address and Data
Fast Erase and Word-Program (typical):
– Sector-Erase Time: 18 ms
– Block-Erase Time: 18 ms
– Chip-Erase Time: 70 ms
– Word-Program Time: 14 µs
– Chip Rewrite Time: 8 seconds
Automatic Write Timing
– Internal VPP Generation
End-of-Write Detection
– Toggle Bit
– Data# Polling
– Ready/Busy# pin
CMOS I/O Compatibility
Conforms to Common Flash Memory Interface (CFI)
JEDEC Standards
– Flash EEPROM Pinouts and command sets
Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (8mm x 10mm)
PRODUCT DESCRIPTION
The SST36VF1601 is 1M x16 CMOS Concurrent Read/
Write Flash Memory manufactured with SST’s proprietary,
high performance CMOS SuperFlash technology. The
split-gate cell design and thick oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches.The SST36VF1601 writes (Program
or
Erase)
with
a
2.7-3.6V
power
supply.
The
SST36VF1601 device conforms to JEDEC standard
pinouts for x16 memories.
Featuring
high
performance
Word-Program,
the
SST36VF1601 device provides a typical Word-Program
time of 14 µsec. The devices use Toggle Bit or Data# Poll-
ing to detect the completion of the Program or Erase opera-
tion.
To
protect
against
inadvertent
write,
the
SST36VF1601 device has on-chip hardware and Software
Data Protection schemes. Designed, manufactured, and
tested
for
a
wide
spectrum
of
applications,
the
SST36VF1601 device is offered with a guaranteed endur-
ance of 10,000 cycles. Data retention is rated at greater
than 100 years.
The SST36VF1601 is suited for applications that require
convenient and economical updating of program, configu-
ration, or data memory. For all system applications, the
SST36VF1601 significantly improves performance and reli-
ability,
while
lowering
power
consumption.
The
SST36VF1601 inherently uses less energy during Erase
and Program than alternative flash technologies. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to pro-
gram and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less than
alternative flash technologies. The SST36VF1601 also
improves flexibility while lowering the cost for program,
data, and configuration storage applications.
SST36V160116Mb (x16) Concurrent SuperFlash


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