8

Data Sheet

2 Mbit Flash + 1 Mbit SRAM ComboMemory

SST31LF021 / SST31LF021E

©2001 Silicon Storage Technology, Inc.

S71137-03-000

10/01 392

TABLE

Symbol

Parameter

Limits

Test Conditions

Min

Max

Units

Power Supply Current

Read

Flash

12

mA

SRAM

40

mA

Concurrent Operation

55

mA

Write

Flash (Program)

15

mA

SRAM

40

mA

30

µA

Input Leakage Current

1

µA

Output Leakage Current

1

µA

Input Low Voltage

0.4

V

Input High Voltage

Input High Voltage (CMOS)

V

Output Low Voltage

0.2

V

Output High Voltage

V

11.4

12.6

V

200

µA

T5.3 392

1. Specification applies to commercial temperature devices only. This parameter may be higher for extended devices.

TABLE

Symbol

Parameter

Minimum

Units

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

Power-up to Read Operation

100

µs

Power-up to Write Operation

100

µs

T6.1 392

TABLE

Parameter

Description

Test Condition

Maximum

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

I/O Pin Capacitance

12 pF

Input Capacitance

6 pF

T7.0 392

TABLE

Symbol

Parameter

Minimum Specification

Units

Test Method

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

Endurance

10,000

Cycles

JEDEC Standard A117

Data Retention

100

Years

JEDEC Standard A103

Latch Up

mA

JEDEC Standard 78

T8.1 392