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MCR8DSM Datasheet(PDF) 4 Page - Motorola, Inc

Part No. MCR8DSM
Description  Silicon Controlled Rectifiers
Download  6 Pages
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MCR8DSM Datasheet(HTML) 4 Page - Motorola, Inc

   
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MCR8DSM MCR8DSN
4
Motorola Thyristor Device Data
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
Figure 9. Holding Current versus
Gate–Cathode Resistance
65
110
–40
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
1000
10 K
100
RGK, GATE–CATHODE RESISTANCE (OHMS)
10
6.0
4.0
2.0
0
1.0
0.1
–25
5.0
20
50
95
10
TJ = 25°C
–10
35
80
Figure 10. Exponential Static dv/dt versus
Gate–Cathode Resistance and Junction
Temperature
100
RGK, GATE–CATHODE RESISTANCE (OHMS)
1000
10
1.0
TJ = 110°C
1000
IGT = 10 mA
RGK = 1.0 KW
65
110
–40
1.0
0.1
–25
5.0
20
50
95
10
–10
35
80
RGK = 1.0 KW
Figure 11. Exponential Static dv/dt versus
Gate–Cathode Resistance and Peak Voltage
Figure 12. Exponential Static dv/dt versus
Gate–Cathode Resistance and Gate Trigger
Current Sensitivity
8.0
IGT = 25 mA
100
90
°C
70
°C
100
RGK, GATE–CATHODE RESISTANCE (OHMS)
1000
10
1.0
TJ = 110°C
1000
100
VPK = 800 V
600 V
400 V
100
RGK, GATE–CATHODE RESISTANCE (OHMS)
1000
10
1.0
VD = 800 V
TJ = 110°C
1000
100
IGT = 10 mA
IGT = 25 mA


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