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MAGX-000912-125L00 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

Part No. MAGX-000912-125L00
Description  GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
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Maker  MA-COM [M/A-COM Technology Solutions, Inc.]
Homepage  http://www.macomtech.com
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MAGX-000912-125L00 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

   
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GaN on SiC HEMT Pulsed Power Transistor
125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
MAGX-000912-125L00
Production V1
18 Aug 11
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
Features
 GaN depletion mode HEMT microwave transistor
 Internally matched
 Common source configuration
 Broadband Class AB operation
 RoHS Compliant
 +50V Typical Operation
MTTF of 114 years (Channel Temperature < 200°C)
Applications
Avionics: Mode-S, TCAS, JTIDS, DME and TACAN
.
Product Description
The MAGX-000912-125L00 is a gold metalized matched Gallium
Nitride (GaN) on Silicon Carbide RF power transistor optimized for
civilian and military pulsed avionics amplifier applications the 960
MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME
and TACAN . Using state of the art wafer fabrication processes,
these high performance transistors provide high gain, efficiency,
bandwidth, ruggedness over a wide bandwidth for today’s
demanding application needs. High breakdown voltages allow for
reliable and stable operation in extreme mismatched load
conditions unparalleled with older semiconductor technologies.
Ordering Information
MAGX-000912-125L00 125W GaN Power Transistor
MAGX-000912-SB0PPR Evaluation Fixture
Typical RF Performance at Pout = 125W Peak
Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows:
Vdd=50V, Idq=100mA (pulsed), F=960-1215 MHz, Pulse=128us, Duty=10%.
Freq
Pin
Gain
Slope
Id
Eff
Avg-Eff
RL
Droop
(MHz)
(W)
(dB)
(dB)
(A)
(%)
(%)
(dB)
(dB)
960
1.4
19.7
-
3.9
64.4
-
-6.1
0.3
1030
1.3
19.8
-
4.0
61.6
-
-11.9
0.3
1090
1.6
18.9
-
4.1
60.4
-
-9.6
0.3
1150
1.7
18.6
-
4.1
61.4
-
-9.3
0.3
1215
1.6
18.9
1.2
4.0
61.9
61.9
-12.0
0.3


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