C2012X5R0J476M datasheet(6/34 Pages) TI1

Part #	C2012X5R0J476M

Description	Complete DDR2, DDR3 and DDR3L Memory Power Solution Synchronous Buck

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Manufacturer	TI1 [Texas Instruments]

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6 / 34 page

TPS51916

SLUSAE1D – DECEMBER 2010 – REVISED JUNE 2012

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ELECTRICAL CHARACTERISTICS (continued)

over operating free-air temperature range, VV5IN = 5 V, VLDOIN is connected to VDDQ output, VMODE= 0 V, VS3= VS5= 5 V

(unless otherwise noted)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

PROTECTIONS

ITRIP

TRIP source current

TA = 25°C, VTRIP = 0.4 V

9

10

11

μA

TRIP source current temperature

TCITRIP

4700

ppm/°C

coefficient(2)

VTRIP

VTRIP voltage range

0.2

3

V

VTRIP = 3.0 V

360

375

390

VOCL

Current limit threshold

VTRIP = 1.6 V

190

200

210

mV

VTRIP = 0.2 V

20

25

30

VTRIP = 3.0 V

–390

–375

–360

VOCLN

Negative current limit threshold

VTRIP = 1.6 V

–210

–200

–190

mV

VTRIP = 0.2 V

–30

–25

–20

VZC

Zero cross detection offset

0

mV

Wake-up

4.2

4.4

4.5

VUVLO

V5IN UVLO threshold voltage

V

Shutdown

3.7

3.9

4.1

VOVP

VDDQ OVP threshold voltage

OVP detect voltage

118%

120%

122%

tOVPDLY

VDDQ OVP propagation delay

With 100 mV over drive

430

ns

VUVP

VDDQ UVP threshold voltage

UVP detect voltage

66%

68%

70%

tUVPDLY

VDDQ UVP delay

1

ms

tUVPENDLY

VDDQ UVP enable delay

1.2

ms

VOOB

OOB Threshold voltage

108%

THERMAL SHUTDOWN

Shutdown temperature(2)

140

TSDN

Thermal shutdown threshold

°C

Hysteresis(2)

10

(2)

Ensured by design. Not production tested.

6

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