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S34ML01G100TFI010 Datasheet(PDF) 3 Page - SPANSION |
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S34ML01G100TFI010 Datasheet(HTML) 3 Page - SPANSION |
3 / 73 page This document states the current technical specifications regarding the Spansion product(s) described herein. The Preliminary status of this document indicates that product qual- ification has been completed, and that initial production has begun. Due to the phases of the manufacturing process that require maintaining efficiency and quality, this document may be revised by subsequent versions or modifications due to changes in technical specifications. Publication Number S34ML01G1_04G1 Revision 10 Issue Date September 6, 2012 Distinctive Characteristics Density – 1 Gbit / 2 Gbit / 4 Gbit Architecture – Input / Output Bus Width: 8-bits / 16-bits – Page Size: – x8 = 2112 (2048 + 64) bytes; 64 bytes is spare area – x16 = 1056 (1024 + 32) words; 32 words is spare area – Block Size: 64 Pages – x8 = 128k + 4k bytes – x16 = 64k + 2k words – Plane Size: – 1 Gbit / 2 Gbit: 1024 Blocks per Plane x8 = 128M + 4M bytes x16 = 64M + 2M words – 4 Gbit: 2048 Blocks per Plane x8 = 256M + 8M bytes x16 = 128M + 4M words –Device Size: – 1 Gbit: 1 Plane per Device or 128 Mbyte – 2 Gbit: 2 Planes per Device or 256 Mbyte – 4 Gbit: 2 Planes per Device or 512 Mbyte NAND Flash Interface – Open NAND Flash Interface (ONFI) 1.0 compliant – Address, Data and Commands multiplexed Supply Voltage – 3.3V device: Vcc = 2.7V ~ 3.6V Security – One Time Programmable (OTP) area – Serial number (unique ID) – Hardware program/erase disabled during power transition Additional Features – 2 Gb and 4 Gb parts support Multiplane Program and Erase commands – Supports Copy Back Program – 2 Gb and 4 Gb parts support Multiplane Copy Back Program – Supports Read Cache Electronic Signature – Manufacturer ID: 01h Operating Temperature – Commercial: 0°C to 70°C – Extended: -25°C to 85°C – Industrial: -40°C to 85°C Performance Page Read / Program – Random access: 25 µs (Max) – Sequential access: 25 ns (Min) – Program time / Multiplane Program time: 200 µs (Typ) Block Erase (S34ML01G1) – Block Erase time: 2.0 ms (Typ) Block Erase / Multiplane Erase (S34ML02G1, S34ML04G1) – Block Erase time: 3.5 ms (Typ) Reliability – 100,000 Program / Erase cycles (Typ) (with 1 bit ECC per 528 bytes (x8) or 264 words (x16)) – 10 Year Data retention (Typ) – Block zero is a valid block and will be valid for at least 1000 program-erase cycles Package Options – Lead Free and Low Halogen – 48-Pin TSOP 12 x 20 x 1.2 mm – 63-Ball BGA 9 x 11 x 1 mm Spansion ® SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 1-bit ECC, x8 and x16 I/O, 3V VCC S34ML01G1, S34ML02G1, S34ML04G1 Data Sheet (Preliminary) |
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