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STW54NM65ND Datasheet(PDF) 1 Page - STMicroelectronics |
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STW54NM65ND Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 13 page June 2011 Doc ID 018885 Rev 1 1/13 13 STW54NM65ND N-channel 650 V, 0.055 Ω, 49 A TO-247 FDmesh™ II Power MOSFET (with fast diode) Features ■ The worldwide best RDS(on) * area amongst the fast recovery diode devices ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Extremely high dv/dt and avalanche capabilities Application Switching applications Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Figure 1. Internal schematic diagram Order code VDSS (@Tjmax) RDS(on) max. ID STW54NM65ND 710 V < 0.065 Ω 49 A TO-247 1 2 3 Table 1. Device summary Order code Marking Package Packaging STW54NM65ND 54NM65ND TO-247 Tube www.st.com |
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