FGW30N60VD datasheet(1/8 Pages) FUJI

Part #	FGW30N60VD

Description	Discrete IGBT (High-Speed V series) 600V / 30A

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Manufacturer	FUJI [Fuji Electric]

Direct Link	http://www.fujielectric.co.jp/eng/fdt/scd

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FGW30N60VD

Discrete IGBT

Discrete IGBT (High-Speed V series)

600V / 30A

Features

Low power loss

Low switching surge and noise

High reliability, high ruggedness (RBSOA, SCSOA etc.)

Applications

Inverter for Motor drive

AC and DC Servo drive amplifier

Uninterruptible power supply

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC=25°C unless otherwise specified)

Items

Symbols Characteristics Units

Remarks

Collector-Emitter voltage

VCES

600

V

Gate-Emitter voltage

VGES

±20

V

DC Collector Current

IC@25

55

A

TC=25°C, Tj=150°C

IC@100

30

A

TC=100°C, Tj=150°C

Pulsed Collector Current

ICP

60

A

Note *1

Turn-Off Safe Operating Area

-

60

A

VCE≤600V, Tj≤175°C

Diode Forward Current

IF@25

48

A

IF@100

25

A

Diode Pulsed Current

IFP

60

A

Note *1

Short Circuit Withstand Time

tSC

10

μs

VCC≤320V, VGE=15V

Tj≤150°C

IGBT Max. Power Dissipation

PD_IGBT

230

W

TC=25°C

FWD Max. Power Dissipation

PD_FWD

125

TC=25°C

Operating Junction Temperature Tj

-40~+175

°C

Storage Temperature

Tstg

-55~+175

°C

Note *1 : Pulse width limited by Tjmax.

Electrical characteristics (at Tj= 25°C unless otherwise specified)

Items

Symbols

Conditions

Characteristics

Unit

min.

typ.

max.

Collector-Emitter Breakdown Voltage

V(BR)CES

IC = 250μA, VGE = 0V

600

-

V

Zero Gate Voltage Collector Current

ICES

VCE = 600V, VGE = 0V

Tj=25°C

-

250

µA

Tj=175°C

-

10

mA

Gate-Emitter Leakage Current

IGES

VCE = 0V, VGE = ±20V

-

200

nA

Gate-Emitter Threshold Voltage

VGE (th)

VCE = +20V, IC = 30mA

6.2

6.7

7.2

V

Collector-Emitter Saturation Voltage

VCE (sat)

VGE = +15V, IC = 30A

Tj=25°C

-

1.60

2.05

V

Tj=175°C

-

2.1

-

Input Capacitance

Cies

VCE=25V

VGE=0V

f=1MHz

-

1910

-

pF

Output Capacitance

Coes

-

145

-

Reverse Transfer Capacitance

Cres

-

105

-

Gate Charge

QG

VCC = 400V

IC = 30A

VGE = 15V

-

225

-

nC

Turn-On Delay Time

td(on)

Tj = 25°C

VCC = 400V

IC = 30A

VGE = 15V

RG = 10Ω

L = 500μH

Energy loss include “tail” and FWD reverse

recovery.

-

35

-

ns

Rise Time

tr

-

60

-

Turn-Off Delay Time

td(off)

-

200

-

Fall Time

tf

-

38

-

Turn-On Energy

Eon

-

1.2

-

mJ

Turn-Off Energy

Eoff

-

0.7

-

Turn-On Delay Time

td(on)

Tj = 175°C

VCC = 400V

IC = 30A

VGE = 15V

RG = 10Ω

L = 500μH

Energy loss include “tail” and FWD reverse

recovery.

-

36

-

ns

Rise Time

tr

-

60

-

Turn-Off Delay Time

td(off)

-

235

-

Fall Time

tf

-

50

-

Turn-On Energy

Eon

-

2.0

-

mJ

Turn-Off Energy

Eoff

-

1.2

-

Forward Voltage Drop

VF

IF=25A

Tj=25°C

-

1.5

1.95

V

Tj=175°C

-

1.3

-

V

Diode Reverse Recovery Time

trr1

VCC=30V

IF = 2.5A

-di/dt=200A/µs

-

40

52

ns

Diode Reverse Recovery Time

trr2

VCC=400V

IF=25A

-diF/dt=200A/µs

Tj=25°C

-

0.30

-

µs

Diode Reverse Recovery Charge

Qrr

-

0.70

-

µC

Equivalent circuit

Gate

Emitter

Collector

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