FGW35N60H datasheet(1/6 Pages) FUJI

Part #	FGW35N60H

Description	Discrete IGBT (High-Speed V series) 600V / 35A

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Manufacturer	FUJI [Fuji Electric]

Direct Link	http://www.fujielectric.co.jp/eng/fdt/scd

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FGW35N60H

Discrete IGBT

Discrete IGBT (High-Speed V series)

600V / 35A

Features

Low power loss

Low switching surge and noise

High reliability, high ruggedness (RBSOA, SCSOA etc.)

Applications

Uninterruptible power supply

Power coditionner

Power factor correction circuit

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC=25°C unless otherwise specified)

Items

Symbols Characteristics Units

Remarks

Collector-Emitter voltage

VCES

600

V

Gate-Emitter voltage

VGES

±20

V

DC Collector Current

IC@25

64

A

TC=25°C, Tj=150°C

IC@100

35

A

TC=100°C, Tj=150°C

Pulsed Collector Current

ICP

105

A

Note *1

Turn-Off Safe Operating Area

-

105

A

VCE≤600V, Tj≤175°C

Short Circuit Withstand Time

tSC

5

μs

VCC≤300V, VGE=12V

Tj≤150°C

Maximum Power Dissipation

PD

230

W

TC=25°C

Operating Junction Temperature Tj

-40~+175

°C

Storage Temperature

Tstg

-55~+175

°C

Note *1 : Pulse width limited by Tjmax.

Electrical characteristics (at Tj= 25°C unless otherwise specified)

Items

Symbols

Conditions

Characteristics

Unit

min.

typ.

max.

Collector-Emitter Breakdown Voltage

V(BR)CES

IC = 250μA, VGE = 0V

600

-

V

Zero Gate Voltage Collector Current

ICES

VCE = 600V, VGE = 0V

Tj=25°C

-

250

µA

Tj=175°C

-

10

mA

Gate-Emitter Leakage Current

IGES

VCE = 0V, VGE = ±20V

-

200

nA

Gate-Emitter Threshold Voltage

VGE (th)

VCE = +20V, IC = 35mA

4.0

5.0

6.0

V

Collector-Emitter Saturation Voltage

VCE (sat)

VGE = +15V, IC = 35A

Tj=25°C

-

1.50

1.95

V

Tj=175°C

-

1.80

-

Input Capacitance

Cies

VCE=25V

VGE=0V

f=1MHz

-

2800

-

pF

Output Capacitance

Coes

-

140

-

Reverse Transfer Capacitance

Cres

-

100

-

Gate Charge

QG

VCC = 400V

IC = 35A

VGE = 15V

-

210

-

nC

Turn-On Delay Time

td(on)

Tj = 25°C

VCC = 400V

IC = 35A

VGE = 15V

RG = 10Ω

L = 500μH

Energy loss include “tail” and FWD

(FDRW15S60L) reverse recovery.

-

32

-

ns

Rise Time

tr

-

60

-

Turn-Off Delay Time

td(off)

-

200

-

Fall Time

tf

-

40

-

Turn-On Energy

Eon

-

0.90

-

mJ

Turn-Off Energy

Eoff

-

0.85

-

Turn-On Delay Time

td(on)

Tj = 175°C

VCC = 400V

IC = 35A

VGE = 15V

RG = 10Ω

L = 500μH

Energy loss include “tail” and FWD

(FDRW15S60L) reverse recovery.

-

33

-

ns

Rise Time

tr

-

60

-

Turn-Off Delay Time

td(off)

-

225

-

Fall Time

tf

-

50

-

Turn-On Energy

Eon

-

1.40

-

mJ

Turn-Off Energy

Eoff

-

1.25

-

Thermal resistance

Items

Symbols

Conditions

Characteristics

Unit

min.

typ.

max.

Thermal Resistance, Junction-Ambient

Rth(j-a)

-

50

°C/W

Thermal Resistance Junction to Case

Rth(j-c)

-

0.641

Equivalent circuit

Gate

Emitter

Collector

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FGW35N60H Datasheet(PDF) 1 Page - Fuji Electric

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