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6MBP50VDA060-50 Datasheet(PDF) 2 Page - Fuji Electric

Part No. 6MBP50VDA060-50
Description  IGBT MODULE (V series) 600V / 50A / IPM
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Maker  FUJI [Fuji Electric]
Homepage  http://www.fujielectric.co.jp/eng/fdt/scd
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6MBP50VDA060-50 Datasheet(HTML) 2 Page - Fuji Electric

   
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IGBT Modules
6MBP50VDA060-50
http://www.fujielectric.com/products/semiconductor/
3
Electrical Characteristics (Tj=25ºC, VCC=15V unless otherwise specified)
Items
Symbol
Conditions
Min.
Typ.
Max.
Units
Collector Current at off signal input
ICES
VCE=600V
-
-
1.0
mA
Collector-Emitter saturation voltage
VCE(sat)
IC=50A
Terminal
-
-
1.95
V
Chip
-
1.40
-
V
Forward voltage of FWD
VF
IF=50A
Terminal
-
-
2.35
V
Chip
-
1.80
-
V
Collector Current at off signal input
ICES
-
-
-
-
mA
Collector-Emitter saturation voltage
VCE(sat)
-
-
-
-
V
-
-
-
V
Forward voltage of FWD
VF
-
-
-
-
V
-
-
-
V
Switching time
ton
VDC=300V, Tj=125ºC, IC=50A
1.1
-
-
µs
toff
-
-
2.1
µs
trr
VDC=300V, IC=50A
-
-
0.3
µs
Supply current of P-side pre-driver (per one unit)
Iccp
Switching Frequency= 0-15kHz
TC=-20~110ºC
-
-
12
mA
Supply current of N-side pre-driver
Iccn
-
-
36
mA
Input signal threshold voltage
Vinth(on)
Vin-GND
ON
1.2
1.4
1.6
V
Vinth(off)
OFF
1.5
1.7
1.9
V
Over Current Protection
Level
Inverter
IOC
Tj=125ºC
75
-
-
A
Brake
-
-
-
A
Over Current Protection Delay time
tdOC
Tj=125ºC
-
5
-
µs
Short Circuit Protection Delay time
tSC
Tj=125ºC
-
2
3
µs
IGBT Chips Over Heating Protection Temperature Level TjOH
Surface of IGBT Chips
150
-
-
ºC
Over Heating Protection Hysteresis
TjH
-
20
-
ºC
Under Voltage Protection Level
VUV
11.0
-
12.5
V
Under Voltage Protection Hysteresis
VH
0.2
0.5
-
V
Alarm Signal Hold Time
tALM(OC)
ALM-GND
TC=-20~110ºC
1.0
2.0
2.4
ms
tALM(UV)
VCC 10V
2.5
4.0
4.9
ms
tALM(TjOH)
5.0
8.0
11.0
ms
Resistance for current limit
RALM
960
1265
1570
Ω
Thermal Characteristics (TC = 25ºC)
Items
Symbol
Min.
Typ.
Max.
Units
Junction to Case Thermal Resistance (*10)
Inverter
IGBT
Rth(j-c)Q
-
-
0.62
°C/W
FWD
Rth(j-c)D
-
-
0.98
°C/W
Brake
IGBT
Rth(j-c)Q
-
-
-
°C/W
FWD
Rth(j-c)D
-
-
-
°C/W
Case to Fin Thermal Resistance with Compound
Rth(c-f)
-
0.05
-
°C/W
Note *10: For 1device, the measurement point of the case is just under the chip.
Noise Immunity (VDC=300V, VCC=15V)
Items
Conditions
Min.
Typ.
Max.
Units
Common mode rectangular noise
Pulse width 1μs, polarity ±, 10 min.
Judge : no over-current, no miss operating
±2.0
-
-
kV
Recommended Operating Conditions
Items
Symbol
Min.
Typ.
Max.
Units
DC Bus Voltage
VDC
-
-
400
V
Power Supply Voltage of Pre-Driver
VCC
13.5
15.0
16.5
V
Switching frequency of IPM
fSW
-
-
20
kHz
Arm shoot through blocking time for IPM's input signal tdead
1.0
-
-
µs
Screw Torque (M4)
-
1.3
-
1.7
Nm


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