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Electromigration Fail Mode

Wirebond Fail Mode

OPA2333-HT

www.ti.com

SBOS483F – JULY 2009 – REVISED AUGUST 2012

(1)

See datasheet for absolute maximum and minimum recommended operating conditions.

(2)

Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect

life).

(3)

The predicted operating lifetime vs. junction temperature is based on reliability modeling using electromigration as the

dominant failure mechanism affecting device wearout for the specific device process and design characteristics.

(4)

Wirebond fail mode applicable for D package only.

Figure 1. OPA2333SKGD1/OPA2333HD Operating Life Derating Chart

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