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LF353MX Datasheet(PDF) 4 Page - Texas Instruments

Part No. LF353MX
Description  LF353 Wide Bandwidth Dual JFET Input Operational Amplifier
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Maker  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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LF353MX Datasheet(HTML) 4 Page - Texas Instruments

 
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AC Electrical Characteristics (Continued)
(Note 5)
Symbol
Parameter
Conditions
LF353
Units
Min
Typ
Max
THD
Total Harmonic Distortion
A
V=+10, RL=10k,
V
O=20Vp−p,
BW=20 Hz-20 kHz
<0.02
%
Note 2: For operating at elevated temperatures, the device must be derated based on a thermal resistance of 115˚C/W typ junction to ambient for the N package,
and 158˚C/W typ junction to ambient for the H package.
Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4: The power dissipation limit, however, cannot be exceeded.
Note 5: These specifications apply for VS=±15V and 0˚C≤TA≤+70˚C. VOS,IBand IOS are measured at VCM=0.
Note 6: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, Tj. Due to the limited
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, PD.Tj=TAjA PD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is
recommended if input bias current is to be kept to a minimum.
Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice. VS
= ±6V to ±15V.
Note 8: Human body model, 1.5 k
Ω in series with 100 pF.
Typical Performance Characteristics
Input Bias Current
Input Bias Current
00564918
00564919
Supply Current
Positive Common-Mode Input Voltage Limit
00564920
00564921
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