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MCM72F6 Datasheet(PDF) 6 Page - Motorola, Inc |
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MCM72F6 Datasheet(HTML) 6 Page - Motorola, Inc |
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6 / 10 page  MCM72F6 •MCM72F7 6 MOTOROLA FAST SRAM ABSOLUTE MAXIMUM RATINGS (Voltages Referenced to VSS = 0 V) Rating Symbol Value Unit Power Supply Voltage VDD – 0.5 to + 4.6 V Voltage Relative to VSS Vin, Vout – 0.5 to VDD + 0.5 V Output Current (per I/O) Iout ± 20 mA Power Dissipation MCM72F6 MCM72F7 PD 4.6 9.2 W Ambient Temperature TA 0 to 70 °C Die Temperature TJ 110 °C Temperature Under Bias Tbias – 10 to + 85 °C Storage Temperature Tstg – 55 to + 125 °C NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPER- ATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. DC OPERATING CONDITIONS AND CHARACTERISTICS (VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted) RECOMMENDED OPERATING CONDITIONS (Voltages Referenced to VSS = 0 V) Parameter Symbol Min Max Unit Supply Voltage (Operating Voltage Range) VDD 3.135 3.6 V Input High Voltage VIH 2.0 VDD + 0.3 V Input Low Voltage VIL – 0.5* 0.8 V *VIL ≥ – 2.0 V for t ≤ tKHKH/2. DC CHARACTERISTICS Parameter Symbol Min Max Unit Input Leakage Current (0 V ≤ Vin ≤ VDD) Ilkg(I) — ± 1.0 µA Output Leakage Current (0 V ≤ Vin ≤ VDD) Ilkg(O) — ± 1.0 µA Output Low Voltage (IOL = + 8.0 mA) VOL — 0.4 V Output High Voltage (IOH = – 4.0 mA) VOH 2.4 — V POWER SUPPLY CURRENTS Parameter Symbol Min Max Unit AC Supply Current (Device Selected, All Outputs Open, MCM72F6DG9 Cycle Time ≥ tKHKH min) MCM72F6DG10 MCM72F6DG12 MCM72F7DG9 MCM72F7DG10 MCM72F7DG12 IDDA — 900 860 840 1800 1720 1680 mA CMOS Standby Supply Current (Deselected, MCM72F6DG9 Clock (K) Cycle Time ≥ tKHKH, All Inputs Toggling at MCM72F6DG10 CMOS Levels Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V) MCM72F6DG12 MCM72F7DG9 MCM72F7DG10 MCM72F7DG912 ISB1 — 440 400 380 880 800 760 mA Clock Running Supply Current (Deselected, MCM72F6DG9 Clock (K) Cycle Time ≥ tKHKH, All Other Inputs MCM72F6DG10/12 Held to Static CMOS Levels Vin ≤ VSS + 0.2 V MCM72F7DG9 or ≥ VDD – 0.2 V) MCM72F7DG10/12 ISB2 — 160 140 320 280 mA MCM72F6 CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 0 to 70°C, Periodically Sampled Rather Than 100% Tested) Parameter Symbol Typ Max Unit Input Capacitance W, K Other Inputs Cin — — 16 36 pF I/O Capacitance CI/O — 19 pF This device contains circuitry to protect the inputs against damage due to high static volt- ages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated volt- ages to this high–impedance circuit. This BiCMOS memory circuit has been designed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. This device contains circuitry that will ensure the output devices are in High–Z at power up. |
Similar Part No. - MCM72F6 |
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Similar Description - MCM72F6 |
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