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MCM72F6 Datasheet(PDF) 6 Page - Motorola, Inc

Part No. MCM72F6
Description  512KB and 1MB Synchronous Fast Static RAM Module
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MCM72F6 Datasheet(HTML) 6 Page - Motorola, Inc

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MCM72F6
•MCM72F7
6
MOTOROLA FAST SRAM
ABSOLUTE MAXIMUM RATINGS (Voltages Referenced to VSS = 0 V)
Rating
Symbol
Value
Unit
Power Supply Voltage
VDD
– 0.5 to + 4.6
V
Voltage Relative to VSS
Vin, Vout
– 0.5 to VDD + 0.5
V
Output Current (per I/O)
Iout
± 20
mA
Power Dissipation
MCM72F6
MCM72F7
PD
4.6
9.2
W
Ambient Temperature
TA
0 to 70
°C
Die Temperature
TJ
110
°C
Temperature Under Bias
Tbias
– 10 to + 85
°C
Storage Temperature
Tstg
– 55 to + 125
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS (Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Max
Unit
Supply Voltage (Operating Voltage Range)
VDD
3.135
3.6
V
Input High Voltage
VIH
2.0
VDD + 0.3
V
Input Low Voltage
VIL
– 0.5*
0.8
V
*VIL ≥ – 2.0 V for t ≤ tKHKH/2.
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (0 V
≤ Vin ≤ VDD)
Ilkg(I)
± 1.0
µA
Output Leakage Current (0 V
≤ Vin ≤ VDD)
Ilkg(O)
± 1.0
µA
Output Low Voltage (IOL = + 8.0 mA)
VOL
0.4
V
Output High Voltage (IOH = – 4.0 mA)
VOH
2.4
V
POWER SUPPLY CURRENTS
Parameter
Symbol
Min
Max
Unit
AC Supply Current (Device Selected, All Outputs Open,
MCM72F6DG9
Cycle Time
≥ tKHKH min)
MCM72F6DG10
MCM72F6DG12
MCM72F7DG9
MCM72F7DG10
MCM72F7DG12
IDDA
900
860
840
1800
1720
1680
mA
CMOS Standby Supply Current (Deselected,
MCM72F6DG9
Clock (K) Cycle Time
≥ tKHKH, All Inputs Toggling at
MCM72F6DG10
CMOS Levels Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)
MCM72F6DG12
MCM72F7DG9
MCM72F7DG10
MCM72F7DG912
ISB1
440
400
380
880
800
760
mA
Clock Running Supply Current (Deselected,
MCM72F6DG9
Clock (K) Cycle Time
≥ tKHKH, All Other Inputs
MCM72F6DG10/12
Held to Static CMOS Levels Vin ≤ VSS + 0.2 V
MCM72F7DG9
or
≥ VDD – 0.2 V)
MCM72F7DG10/12
ISB2
160
140
320
280
mA
MCM72F6 CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 0 to 70°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Max
Unit
Input Capacitance
W, K
Other Inputs
Cin
16
36
pF
I/O Capacitance
CI/O
19
pF
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised that
normal precautions be taken to avoid application
of any voltage higher than maximum rated volt-
ages to this high–impedance circuit.
This BiCMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established.
This device contains circuitry that will ensure
the output devices are in High–Z at power up.


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