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FS30KMJ-03 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. FS30KMJ-03
Description  HIGH-SPEED SWITCHING USE
Download  4 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

FS30KMJ-03 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30KMJ-03
HIGH-SPEED SWITCHING USE
0
10
20
30
40
50
100
35 7
2
101
35 7
2
102
32 3
57
VGS = 4V
10V
Tc = 25
°C
Pulse Test
0
8
16
24
32
40
02468
10
Tc = 25
°C
VDS = 10V
Pulse Test
0
1.0
2.0
3.0
4.0
5.0
02468
10
ID = 50A
Tc = 25
°C
Pulse Test
30A
10A
102
3
5
7
103
2
3
5
7
104
2
3
2
5
7
100 2101
35 7
35 7
2
102
35 7
2 3
2
Ciss
Coss
Crss
Tch = 25
°C
f = 1MHZ
VGS = 0V
100
101
23 4 5 7
102
23 4 5 7
100
101
2
3
4
5
7
102
2
3
4
5
7
td(off)
td(on)
tr
Tch = 25
°C
VDD = 15V
VGS = 10V
RGEN = RGS = 50
tf
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT ID (A)
100
101
23 4 5 7
102
23 4 5 7
100
101
2
3
4
5
7
102
2
3
4
5
7
TC = 25
°C 75°C
125
°C
VDS = 5V
Pulse Test


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