DMP2039UFDE4-7 datasheet(4/6 Pages) DIODES

Part #	DMP2039UFDE4-7

Description	25V P-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

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4 / 6 page

DMP2039UFDE4

Document number: DS35675 Rev. 3 - 2

4 of 6

www.diodes.com

March 2012

DMP2039UFDE4

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

A

0

2

4

6

8

10

12

14

16

18

20

0.4

0.6

0.8

1.0

1.2

-V

, SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

SD

0

5

10

15

20

-V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Junction Capacitance

DS

C

oss

C

rss

C

iss

f = 1MHz

0

5

10

15

20

25

1

10

100

1,000

100,000

10,000

-V

, DRAIN-SOURCE VOLTAGE(V)

Fig. 10 Typical Drain-Source Leakage Current vs. Voltage

DS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

0

5

10

15

20

25

30

35

40

45 50

0

2

4

6

8

Q , TOTAL GATE CHARGE (nC)

Fig. 11 Gate-Charge Characteristics

g

0.01

0.1

1

10

100

0.1

1

10

100

0.01

-V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 12 SOA, Safe Operation Area

DS

R

Limited

DS(on)

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

P

= 10 s

W

µ

T

= 150°C

T = 25°C

J(max)

A

V

= -8V

Single Pulse

GS

DUT on 1 * MRP Board

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DMP2039UFDE4-7 Datasheet(PDF) 4 Page - Diodes Incorporated

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