SIR882ADP datasheet(3/13 Pages) VISHAY

Part #	SIR882ADP

Description	N-Channel 100 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 63367

S11-1662-Rev. A, 15-Aug-11

www.vishay.com

3

Vishay Siliconix

SiR882ADP

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

16

32

48

64

80

0.0

0.5

1.0

1.5

2.0

2.5

V

DS - Drain-to-Source Voltage (V)

V

GS = 2 V

V

GS = 10 V thru 4 V

V

GS = 3 V

0.006

0.007

0.008

0.009

0.010

0.011

0

16

32

48

64

80

I

D - Drain Current (A)

V

GS = 4.5 V

V

GS = 7.5 V

V

GS = 10 V

0

2

4

6

8

10

0

9

18

27

36

45

Q

g - Total Gate Charge (nC)

V

DS = 50 V

V

DS = 75 V

V

DS = 25 V

I

D = 20 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0

1

2

3

4

5

V

GS - Gate-to-Source Voltage (V)

T

C = 25 °C

T

C = 125 °C

T

C = - 55 °C

0

620

1240

1860

2480

3100

0

20

40

60

80

100

V

DS - Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

0

25

50

75

100

125

150

T

J - Junction Temperature (°C)

I

D = 20 A

V

GS = 10 V

V

GS = 4.5 V

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