ADF4360-0BCPZ datasheet(6/24 Pages) AD

Part #	ADF4360-0BCPZ

Description	Integrated Synthesizer and VCO

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Manufacturer	AD [Analog Devices]

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ADF4360-0

Data Sheet

Rev. B | Page 6 of 24

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 3.

Parameter

Rating

AVDD to GND1

−0.3 V to +3.9 V

AVDD to DVDD

−0.3 V to +0.3 V

VVCO to GND

−0.3 V to +3.9 V

VVCO to AVDD

−0.3 V to +0.3 V

Digital I/O Voltage to GND

−0.3 V to VDD + 0.3 V

Analog I/O Voltage to GND

−0.3 V to VDD + 0.3 V

REFIN to GND

−0.3 V to VDD + 0.3 V

Operating Temperature Range

−40°C to + 85°C

Storage Temperature Range

−65°C to +150°C

Maximum Junction Temperature

150°C

CSP θJA Thermal Impedance

Paddle Soldered

50°C/W

Paddle Not Soldered

88°C/W

Lead Temperature, Soldering

Vapor Phase (60 sec)

215°C

Infrared (15 sec)

220°C

1 GND = AGND = DGND = 0 V.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those included in the operational

sections of this specification is not implied. Exposure to

absolute maximum rating conditions for extended periods may

affect device reliability.

This device is a high performance RF integrated circuit with an

ESD rating of <1 kV and it is ESD sensitive. Proper precautions

should be taken for handling and assembly.

TRANSISTOR COUNT

12543 (CMOS) and 700 (Bipolar).

ESD CAUTION

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