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ADS7846E Datasheet(PDF) 2 Page - Texas Instruments |
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ADS7846E Datasheet(HTML) 2 Page - Texas Instruments |
2 / 30 page ADS7846 2 SBAS125H www.ti.com ABSOLUTE MAXIMUM RATINGS(1) +VCC to GND ........................................................................ –0.3V to +6V Analog Inputs to GND ............................................ –0.3V to +VCC + 0.3V Digital Inputs to GND ............................................. –0.3V to +VCC + 0.3V Power Dissipation .......................................................................... 250mW Maximum Junction Temperature ................................................... +150 °C Operating Temperature Range ........................................ –40 °C to +85°C Storage Temperature Range ......................................... –65 °C to +150°C Lead Temperature (soldering, 10s) ............................................... +300 °C NOTE: (1) Stresses above these ratings can cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. MAXIMUM INTEGRAL SPECIFIED LINEARITY PACKAGE TEMPERATURE PACKAGE ORDERING PRODUCT ERROR (LSB) PACKAGE-LEAD DESIGNATOR RANGE MARKING NUMBER ADS7846E ±2 SSOP-16 DBQ –40 °C to +85°C ADS7846E ADS7846E "" " " " " ADS7846E/2K5 ADS7846N ±2 TSSOP-16 PW –40 °C to +85°C ADS7846N ADS7846N "" " " " " ADS7846N/2K5 "" " " " " ADS7846N/2K5G4 ADS7846I ±2 VFBGA-48 GQC –40 °C to +85°C ADS7846 ADS7846IGQCR ADS7846I ±2 QFN-16 RGV –40 °C to +85°C ADS7846 ADS7846IRGVT "" " " " " ADS7846IRGVR NOTE: (1) For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet, or see the TI web site at www.ti.com. PACKAGE/ORDERING INFORMATION(1) ELECTROSTATIC DISCHARGE SENSITIVITY This integrated circuit can be damaged by ESD. Texas Instru- ments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. |
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