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CY14B104LA-BA45XI Datasheet(PDF) 7 Page - Cypress Semiconductor |
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CY14B104LA-BA45XI Datasheet(HTML) 7 Page - Cypress Semiconductor |
7 / 26 page CY14B104LA, CY14B104NA Document Number: 001-49918 Rev. *L Page 7 of 26 Preventing AutoStore The AutoStore function is disabled by initiating an AutoStore disable sequence. A sequence of read operations is performed in a manner similar to the software STORE initiation. To initiate the AutoStore disable sequence, the following sequence of CE or OE controlled read operations must be performed: 1. Read address 0x4E38 Valid READ 2. Read address 0xB1C7 Valid READ 3. Read address 0x83E0 Valid READ 4. Read address 0x7C1F Valid READ 5. Read address 0x703F Valid READ 6. Read address 0x8B45 AutoStore Disable The AutoStore is re-enabled by initiating an AutoStore enable sequence. A sequence of read operations is performed in a manner similar to the software RECALL initiation. To initiate the AutoStore enable sequence, the following sequence of CE or OE controlled read operations must be performed: 1. Read address 0x4E38 Valid READ 2. Read address 0xB1C7 Valid READ 3. Read address 0x83E0 Valid READ 4. Read address 0x7C1F Valid READ 5. Read address 0x703F Valid READ 6. Read address 0x4B46 AutoStore Enable If the AutoStore function is disabled or re-enabled, a manual STORE operation (hardware or software) must be issued to save the AutoStore state through subsequent power-down cycles. The part comes from the factory with AutoStore enabled and 0x00 written in all cells. Data Protection The CY14B104LA/CY14B104NA protects data from corruption during low voltage conditions by inhibiting all externally initiated STORE and write operations. The low voltage condition is detected when VCC < VSWITCH. If the CY14B104LA/CY14B104NA is in a write mode (both CE and WE are LOW) at power-up, after a RECALL or STORE, the write is inhibited until the SRAM is enabled after tLZHSB (HSB to output active). This protects against inadvertent writes during power-up or brown out conditions. L H L X 0x4E38 0xB1C7 0x83E0 0x7C1F 0x703F 0x4B46 Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM AutoStore Enable Output data Output data Output data Output data Output data Output data Active[14] L H L X 0x4E38 0xB1C7 0x83E0 0x7C1F 0x703F 0x8FC0 Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM Non-volatile STORE Output data Output data Output data Output data Output data Output high Z Active ICC2[14] L H L X 0x4E38 0xB1C7 0x83E0 0x7C1F 0x703F 0x4C63 Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM Non-volatile RECALL Output data Output data Output data Output data Output data Output high Z Active[14] Table 1. Mode Selection (continued) CE WE OE BHE, BLE[11] A15–A0[12] Mode I/O Power Note 14. The six consecutive address locations must be in the order listed. WE must be HIGH during all six cycles to enable a non-volatile cycle. |
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