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CY7C2570XV18-600BZXC Datasheet(PDF) 8 Page - Cypress Semiconductor

Part # CY7C2570XV18-600BZXC
Description  72-Mbit DDR II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C2570XV18-600BZXC Datasheet(HTML) 8 Page - Cypress Semiconductor

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CY7C2568XV18, CY7C2570XV18
Document Number: 001-70206 Rev. *B
Page 8 of 29
DDR II+. CQ is referenced with respect to K and CQ is
referenced with respect to K. These are free-running clocks and
are synchronized to the input clock of the DDR II+. The timing for
the echo clocks is shown in the Switching Characteristics on
page 23.
Valid Data Indicator (QVLD)
QVLD is provided on the DDR II+ to simplify data capture on high
speed systems. The QVLD is generated by the DDR II+ device
along with data output. This signal is also edge aligned with the
echo clock and follows the timing of any data pin. This signal is
asserted half a cycle before valid data arrives.
On-Die Termination (ODT)
These devices have an On-Die Termination feature for Data
inputs (D[x:0]), Byte Write Selects (BWS[x:0]), and Input Clocks (K
and K). The termination resistors are integrated within the chip.
The ODT range selection is enabled through ball R6 (ODT pin).
The ODT termination tracks value of RQ where RQ is the resistor
tied to the ZQ pin. ODT range selection is made during power up
initialization. A LOW on this pin selects a low range that follows
RQ/3.33 for 175
< RQ < 350 (where RQ is the resistor tied
to ZQ pin)
A HIGH on this pin selects a high range that follows
RQ/1.66 for 175
< RQ < 250 (where RQ is the resistor tied
to ZQ pin). When left floating, a high range termination value is
selected by default. For a detailed description on the ODT
implementation, refer to the application note, On-Die Termination
for QDRII+/DDRII+ SRAMs.
PLL
These chips use a PLL that is designed to function between
120 MHz and the specified maximum clock frequency. During
power up, when the DOFF is tied HIGH, the PLL is locked after
100
s of stable clock. The PLL can also be reset by slowing or
stopping the input clock K and K for a minimum of 30 ns.
However, it is not necessary to reset the PLL to lock to the
desired frequency. The PLL automatically locks 100
s after a
stable clock is presented. The PLL may be disabled by applying
ground to the DOFF pin. When the PLL is turned off, the device
behaves in DDR I mode (with one cycle latency and a longer
access time). For information, refer to the application note, PLL
Considerations in QDRII/DDRII/QDRII+/DDRII+.
Application Example
Figure 2 shows two DDR II+ used in an application.
Figure 2. Application Example
DQ
A
SRAM#2
LD
CQ/CQ
K
ZQ
K
ODT
R/W BWS
BUS
MASTER
(CPU or ASIC)
DQ
Addresses
LD
R/W
R = 250ohms
Source CLK
Source CLK
Echo Clock1/Echo Clock1
Echo Clock2/Echo Clock2
ODT
R = 250ohms
BWS
DQ
A
SRAM#1
LD
K
ZQ
CQ/CQ
K
ODT
R/W BWS


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