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CY7C1347G-133AXC Datasheet(PDF) 8 Page - Cypress Semiconductor

Part # CY7C1347G-133AXC
Description  4-Mbit (128 K 횞 36) Pipelined Sync SRAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1347G-133AXC Datasheet(HTML) 8 Page - Cypress Semiconductor

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CY7C1347G
Document Number: 38-05516 Rev. *L
Page 8 of 25
to the DQs and DQPs inputs. Doing so tristates the output
drivers. As a safety precaution, DQs and DQPs are automatically
tristated whenever a write cycle is detected, regardless of the
state of OE.
Burst Sequences
The CY7C1347G provides a two-bit wraparound counter, fed by
A[1:0], that implements either an interleaved or linear burst
sequence. The interleaved burst sequence is designed
specifically to support Intel Pentium applications. The linear
burst sequence is designed to support processors that follow a
linear burst sequence. The burst sequence is user-selectable
through the MODE input.
Asserting ADV LOW at clock rise automatically increments the
burst counter to the next address in the burst sequence. Both
read and write burst operations are supported.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ places
the SRAM in a power conservation “sleep” mode. Two clock
cycles are required to enter into or exit from this “sleep” mode.
While in this mode, data integrity is guaranteed. Accesses
pending when entering the “sleep” mode are not considered valid
nor is the completion of the operation guaranteed. The device
must be deselected before entering the “sleep” mode. CE1, CE2,
CE3, ADSP, and ADSC must remain inactive for the duration of
tZZREC after the ZZ input returns LOW.
Interleaved Burst Sequence
First
Address
A[1:0]
Second
Address
A[1:0]
Third
Address
A[1:0]
Fourth
Address
A[1:0]
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Linear Burst Sequence
First
Address
A[1:0]
Second
Address
A[1:0]
Third
Address
A[1:0]
Fourth
Address
A[1:0]
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min
Max
Unit
IDDZZ
Snooze mode standby current
ZZ > VDD 0.2 V
40
mA
tZZS
Device operation to ZZ
ZZ > VDD  0.2 V
2tCYC
ns
tZZREC
ZZ recovery time
ZZ < 0.2 V
2tCYC
–ns
tZZI
ZZ Active to snooze current
This parameter is sampled
2tCYC
ns
tRZZI
ZZ Inactive to exit snooze current This parameter is sampled
0
ns


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