Electronic Components Datasheet Search |
|
CY7C421 Datasheet(PDF) 8 Page - Cypress Semiconductor |
|
CY7C421 Datasheet(HTML) 8 Page - Cypress Semiconductor |
8 / 21 page CY7C421 Document Number: 38-06001 Rev. *H Page 8 of 21 Switching Characteristics Over the Operating Range Parameter [6] Description -15 -20 Unit Min Max Min Max tRC Read Cycle Time 25 – 30 – ns tA Access Time – 15 – 20 ns tRR Read Recovery Time 10 – 10 – ns tPR Read Pulse Width 15 – 20 – ns tLZR[7] Read LOW to Low Z 3 – 3 – ns tDVR[7, 8] Data Valid after Read HIGH 5 – 5 – ns tHZR[7, 8] Read HIGH to High Z – 15 – 15 ns tWC Write Cycle Time 25 – 30 – ns tPW Write Pulse Width 15 – 20 – ns tHWZ[7] Write HIGH to Low Z 5 – 5 – ns tWR Write Recovery Time 10 – 10 – ns tSD Data Setup Time 8 – 12 – ns tHD Data Hold Time 0 – 0 – ns tMRSC MR Cycle Time 25 – 30 – ns tPMR MR Pulse Width 15 – 20 – ns tRMR MR Recovery Time 10 – 10 – ns tRPW Read HIGH to MR HIGH 15 – 20 – ns tWPW Write HIGH to MR HIGH 15 – 20 – ns tRTC Retransmit Cycle Time 25 – 30 – ns tPRT Retransmit Pulse Width 15 – 20 – ns tRTR Retransmit Recovery Time 10 – 10 – ns tEFL MR to EF LOW – 25 – 30 ns tHFH MR to HF HIGH – 25 – 30 ns tFFH MR to FF HIGH – 25 – 30 ns tREF Read LOW to EF LOW – 15 – 20 ns tRFF Read HIGH to FF HIGH – 15 – 20 ns tWEF Write HIGH to EF HIGH – 15 – 20 ns tWFF Write LOW to FF LOW – 15 – 20 ns tWHF Write LOW to HF LOW – 15 – 20 ns tRHF Read HIGH to HF HIGH – 15 – 20 ns tRAE Effective Read from Write HIGH – 15 – 20 ns tRPE Effective Read Pulse Width after EF HIGH 15 – 20 – ns tWAF Effective Write from Read HIGH – 15 – 20 ns tWPF Effective Write Pulse Width after FF HIGH 15 – 20 – ns tXOL Expansion Out LOW Delay from Clock – 15 – 20 ns tXOH Expansion Out HIGH Delay from Clock – 15 – 20 ns Notes 6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V and output loading of the specified IOL/IOH and 30 pF load capacitance, as in part (a) of Figure 4 on page 7, unless otherwise specified. 7. tHZR transition is measured at +200 mV from VOL and –200 mV from VOH. tDVR transition is measured at the 1.5V level. tHWZ and tLZR transition is measured at 100 mV from the steady state. 8. tHZR and tDVR use capacitance loading as in part (b) of Figure 4 on page 7. |
Similar Part No. - CY7C421 |
|
Similar Description - CY7C421 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |