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CY7C1618KV18-333BZXC Datasheet(PDF) 10 Page - Cypress Semiconductor |
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CY7C1618KV18-333BZXC Datasheet(HTML) 10 Page - Cypress Semiconductor |
10 / 32 page CY7C1618KV18, CY7C1620KV18 Document Number: 001-44274 Rev. *H Page 10 of 32 Write Cycle Descriptions The write cycle description table for CY7C1618KV18 follows: [8, 9] BWS0 BWS1 K K Comments L L L–H – During the data portion of a write sequence CY7C1618KV18 both bytes (D[17:0]) are written into the device. L L – L–H During the data portion of a write sequence: CY7C1618KV18 both bytes (D[17:0]) are written into the device. L H L–H – During the data portion of a write sequence: CY7C1618KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. L H – L–H During the data portion of a write sequence CY7C1618KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. H L L–H – During the data portion of a write sequence CY7C1618KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. H L – L–H During the data portion of a write sequence CY7C1618KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. H H L–H – No data is written into the devices during this portion of a write operation. H H – L–H No data is written into the devices during this portion of a write operation. Notes 8. X = “Don’t Care,” H = Logic HIGH, L = Logic LOW, represents rising edge. 9. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. BWS0, BWS1, BWS2, and BWS3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved. |
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