MAX17600–MAX17605

4A Sink /Source Current, 12ns, Dual MOSFET Drivers

2

OUTA, OUTB to GND............................................-0.3V to +16V

Junction Operating Temperature Range ......... -40NC to +125NC

8-Pin TDFN (derate 23.8mW/NC above +70NC) ........1904mW

8-Pin SO (derate 74mW/NC above +70NC)............. 588.2mW*

8-Pin FMAX (derate 12.9mW/NC above +70NC) .....1030.9mW

Operating Temperature Range........................ -40NC to +125NC

Junction Temperature ................................................... +150NC

Storage Temperature Range............................ -65NC to +150NC

Lead Temperature (soldering, 10s) ................................+300NC

Soldering Temperature (reflow) ......................................+240NC

*As per JEDEC 51 standard.

TDFN

SO

F

MAX

ABSOLUTE MAXIMUM RATINGS

Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-

tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

PACKAGE THERMAL CHARACTERISTICS (Note 1)

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

TTL versions

4

14

V

HNM versions

6

14

UVLO

3

3.5

3.85

V

200

mV

120

F

s

IDD_Q

1

2

mA

IDD_SW

switching at 1MHz

12

18

DRIVER OUTPUT (SOURCE) (OUTA, OUTB)

Peak Output Current (Sourcing)

4

A

Driver Output Resistance Pulling Up

(Note 4)

0.88

1.85

I

0.91

1.95

DRIVER OUTPUT (SINK) (OUTA, OUTB)

Peak Output Current (Sinking)

4

A

Driver Output Resistance Pulling

Down (Note 4)

0.5

0.95

I

0.52

1