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MC10XS3412CHFK Datasheet(PDF) 19 Page - Freescale Semiconductor, Inc

Part No. MC10XS3412CHFK
Description  Quad High Side Switch (Dual 10 mOhm, Dual 12 mOhm)
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Maker  FREESCALE [Freescale Semiconductor, Inc]
Homepage  http://www.freescale.com
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MC10XS3412CHFK Datasheet(HTML) 19 Page - Freescale Semiconductor, Inc

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Analog Integrated Circuit Device Data
Freescale Semiconductor
19
10XS3412
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
SPI INTERFACE CHARACTERISTICS(36)
Maximum Frequency of SPI Operation
fSPI
8.0
MHz
Required Low State Duration for RST(37)
tWRST
10
μs
Rising Edge of CS to Falling Edge of CS (Required Setup Time)(38)
tCS
1.0
μs
Rising Edge of RST to Falling Edge of CS (Required Setup Time)(38)
tENBL
5.0
μs
Falling Edge of CS to Rising Edge of SCLK (Required Setup Time)(38)
tLEAD
500
ns
Required High State Duration of SCLK (Required Setup Time)(38)
tWSCLKh
50
ns
Required Low State Duration of SCLK (Required Setup Time)(38)
tWSCLKl
50
ns
Falling Edge of SCLK to Rising Edge of CS (Required Setup Time)(38)
tLAG
60
ns
SI to Falling Edge of SCLK (Required Setup Time)(39)
tSI(SU)
37
ns
Falling Edge of SCLK to SI (Required Setup Time)(39)
tSI(HOLD)
49
ns
SO Rise Time
CL = 80 pF
tRSO
13
ns
SO Fall Time
CL = 80 pF
tFSO
13
ns
SI, CS, SCLK, Incoming Signal Rise Time(39)
tRSI
13
ns
SI, CS, SCLK, Incoming Signal Fall Time(39)
tFSI
13
ns
Time from Rising Edge of SCLK to SO Low-impedance(40)
tSO(EN)
60
ns
Time from Rising Edge of SCLK to SO High-impedance(41)
tSO(DIS)
60
ns
Notes
36.
Parameters guaranteed by design.
37.
RST
low duration measured with outputs enabled and going to OFF or disabled condition.
38.
Maximum setup time required for the 10XS3412 is the minimum guaranteed time needed from the microcontroller.
39.
Rise and Fall time of incoming SI, CS, and SCLK signals suggested for design consideration to prevent the occurrence of double pulsing.
40.
Time required for output status data to be available for use at SO. 1.0 k
Ω on pull-up on CS.
41.
Time required for output status data to be terminated at SO. 1.0 k
Ω on pull-up on CS.
Table 5. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 6.0 V
≤ VPWR ≤ 20 V, 3.0 V ≤ VDD ≤ 5.5 V, -40 °C ≤ TA ≤ 125 °C, GND = 0 V, unless
otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless
otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit


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