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SE1050W Datasheet(PDF) 4 Page - SiGe Semiconductor, Inc. |
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SE1050W Datasheet(HTML) 4 Page - SiGe Semiconductor, Inc. |
4 / 11 page SE1050W LightCharger ™ 10 Gb/s Transimpedance Amplifier Final 45-DST-01 § Rev 1.5 § May 24/02 4 of 11 Absolute Maximum Ratings These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions defined below. Symbol Parameter Min Max Unit VCC Supply Voltage –0.7 6.0 V VIO Voltage at any input or output –0.5 VCC+0.5 V IIO Current sourced into any input or output except TZ_IN –20 20 mA IIO Current sourced into pin TZ_IN –5 5 mA VESD Electrostatic Discharge (100 pF, 1.5 k Ω) except TZ_IN and ACGND –2 2 kV VESD Electrostatic Discharge (100 pF, 1.5 k Ω) pins TZ_IN and ACGND –0.25 0.25 kV Tstg Storage Temperature –65 150 °C Recommended Operating Conditions Symbol Parameter Min Typ Max Unit VCC Supply Voltage 4.7 5.0 5.3 V Tj Operating Junction Temperature –40 100 °C DC Electrical Characteristics Symbol Parameter Min Typ Max Unit ICC Supply Current 86 130 mA Vin Input Bias Voltage 1.28 1.29 1.34 V Vout Output Bias Voltage 3.0 V Rout Output Resistance 38 50 62 Ω |
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