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PA2423L Datasheet(PDF) 3 Page - SiGe Semiconductor, Inc.

Part # PA2423L
Description  2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
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Manufacturer  SIGE [SiGe Semiconductor, Inc.]
Direct Link  http://www.sige.com
Logo SIGE - SiGe Semiconductor, Inc.

PA2423L Datasheet(HTML) 3 Page - SiGe Semiconductor, Inc.

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PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Absolute Maximum Ratings
Symbol
Parameter
Min.
Max.
Unit
VCC
Supply Voltage
-0.3
+3.6
V
VCTL
Control Voltage
-0.3
VCC
V
VRAMP
Ramping Voltage
-0.3
VCC
V
IN
RF Input Power
+8
dBm
TA
Operating Temperature Range
-4
0
+8
5
°C
TSTG
Storage Temperature Range
-4
0
+150
°C
Tj
Maximum Junction Temperature
+15
0
°C
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This
device is a high performance RF integrated circuit with ESD rating < 600V and is ESD sensitive. Handling
and assembly of this device should be at ESD protected workstations.
DC Electrical Characteristics
Conditions: VCC0 = VCC1 = VCC2 = VRAMP = 3.3V, VCTL = 3.3V, PIN = +2dBm,TA =25
°C, f = 2.45GHz,
Input and Output externally matched to 5
0Ω ,unless otherwise noted.
Symbol
Note
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
3
3.3
3.6
V
ICC
1
Supply Current (ICC = IVCC0 + IVCC1 +I VCC2), VCTL = 3.3V
125
150
mA
∆Icctemp
3
Supply Current variation over temperature from TA = 25°C
(-4
0°C <TA <+85°C)
25
%
VCTL
PA Output Power Control Voltage Range
0
VCC
V
ICTL
1
Current sourced by VCTL Pin
200
250
µA
3
Logic High Voltage
2.0
V
VRAMP
3
Logic Low Voltage
0.8
V
Istdby
1
Leakage Current when Vramp = 0V, Vctl = high
0.5
10
µA
DOC# 05PDS002 Rev 4
07/26/2001
Page 3 of 11


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