MD7IC2251NR1 MD7IC2251GNR1

3

RF Device Data

Freescale Semiconductor, Inc.

Characteristic

Symbol

Min

Typ

Max

Unit

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate--Source Leakage Current

—

—

1

μAdc

Gate Threshold Voltage

1.2

2.0

2.7

Vdc

Gate Quiescent Voltage

—

2.7

—

Vdc

Fixture Gate Quiescent Voltage

5.5

6.3

7.5

Vdc

Drain--Source On--Voltage

0.1

0.24

1.2

Vdc

Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.

Power Gain

27.6

28.2

32.0

dB

Power Added Efficiency

PAE

33.5

36.9

—

%

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

PAR

6.2

6.6

—

dB

Adjacent Channel Power Ratio

ACPR

—

--34.2

--31.5

dBc

Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.

Frequency

(dB)

PAE

(%)

Output PAR

(dB)

ACPR

(dBc)

2110 MHz

28.8

38.2

7.1

--34.6

2140 MHz

29.0

37.9

7.1

--36.2

2170 MHz

29.2

37.4

6.9

--36.1

1. Each side of device measured separately.

2. Part internally matched both on input and output.

3. Measurement made with device in a Symmetrical Doherty configuration.

4. Measurement made with device in straight lead configuration before any lead forming operation is applied.

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