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ATC600F0R5BT250XT Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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ATC600F0R5BT250XT Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 17 page MD7IC2251NR1 MD7IC2251GNR1 1 RF Device Data Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on--chip matching that makes it usable from 2110--2170 MHz. This multi--stage structure is rated for 26 to 32 volt operation and covers all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD =28 Volts,IDQ1(A+B) =80 mA, IDQ2A = 260 mA, VGS2B =1.4 Vdc, Pout = 12 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) PAE (%) Output PAR (dB) ACPR (dBc) 2110 MHz 28.8 38.2 7.1 --34.6 2140 MHz 29.0 37.9 7.1 --36.2 2170 MHz 29.2 37.4 6.9 --36.1 • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 63 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 3 dB Compression Point ≃ 58 Watts (1) Features • 100% PAR Tested for Guaranteed Output Power Capability • Production Tested in a Symmetrical Doherty Configuration • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters • On--Chip Matching (50 Ohm Input, DC Blocked) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2) • Integrated ESD Protection • 225°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. Figure 1. Functional Block Diagram Figure 2. Pin Connections Note: Exposed backside of the package is the source terminal for the transistors. Quiescent Current Temperature Compensation (2) VDS1A RFinA VGS1A RFout1/VDS2A VGS2A Quiescent Current Temperature Compensation (2) VDS1B RFinB VGS1B RFout2/VDS2B VGS2B VDS1A RFinA NC RFinB RFout1/VDS2A 1 2 3 4 7 8 14 VGS1B 9 10 11 VGS2A VGS1A NC NC VGS2B NC VDS1B RFout2/VDS2B 13 6 12 (Top View) 5 CARRIER (3) PEAKING (3) Carrier Peaking 1. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. 3. Peaking and Carrier orientation is determined by the test fixture design. 2110--2170 MHz, 12 W AVG., 28 V SINGLE W--CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS MD7IC2251NR1 MD7IC2251GNR1 TO--270 WB--14 PLASTIC MD7IC2251NR1 TO--270 WB--14 GULL PLASTIC MD7IC2251GNR1 Document Number: MD7IC2251N Rev. 0, 5/2012 Freescale Semiconductor Technical Data © Freescale Semiconductor, Inc., 2012. All rights reserved. |
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