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ATC600F0R5BT250XT Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc

Part # ATC600F0R5BT250XT
Description  RF LDMOS Wideband Integrated Power Amplifiers
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

ATC600F0R5BT250XT Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc

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MD7IC2251NR1 MD7IC2251GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC2251N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2110--2170 MHz. This multi--stage
structure is rated for 26 to 32 volt operation and covers all typical cellular
base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Characterization Performance:
VDD =28 Volts,IDQ1(A+B) =80 mA, IDQ2A = 260 mA, VGS2B =1.4 Vdc,
Pout = 12 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz
28.8
38.2
7.1
--34.6
2140 MHz
29.0
37.9
7.1
--36.2
2170 MHz
29.2
37.4
6.9
--36.1
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 63 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point
≃ 58 Watts (1)
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Production Tested in a Symmetrical Doherty Configuration
• Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters
• On--Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
Note: Exposed backside of the package is
the source terminal for the transistors.
Quiescent Current
Temperature Compensation (2)
VDS1A
RFinA
VGS1A
RFout1/VDS2A
VGS2A
Quiescent Current
Temperature Compensation (2)
VDS1B
RFinB
VGS1B
RFout2/VDS2B
VGS2B
VDS1A
RFinA
NC
RFinB
RFout1/VDS2A
1
2
3
4
7
8
14
VGS1B
9
10
11
VGS2A
VGS1A
NC
NC
VGS2B
NC
VDS1B
RFout2/VDS2B
13
6
12
(Top View)
5
CARRIER (3)
PEAKING (3)
Carrier
Peaking
1. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output
PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
3. Peaking and Carrier orientation is determined by the test fixture design.
2110--2170 MHz, 12 W AVG., 28 V
SINGLE W--CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
MD7IC2251NR1
MD7IC2251GNR1
TO--270 WB--14
PLASTIC
MD7IC2251NR1
TO--270 WB--14 GULL
PLASTIC
MD7IC2251GNR1
Document Number: MD7IC2251N
Rev. 0, 5/2012
Freescale Semiconductor
Technical Data
© Freescale Semiconductor, Inc., 2012. All rights reserved.


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