This Data Sheet may be revised by subsequent versions

©2004 Eon Silicon Solution, Inc., www.eonssi.com

or modifications due to changes in technical specifications.

1

EN71NS032A0

Rev. B, Issue Date: 2011/07/05

Distinctive Characteristics

MCP Features

■ Power supply voltage of 1.7V to 1.95V

■ High performance

- 70 ns @ random access

- 7 ns @ burst access (108MHz)

■ Package

- 6.2 x 7.7 x 1.0mm 56 ball BGA

■ Operating Temperature

- 25°C to +85°C

General Description

EN71NS032A0 is a product line of stacked Multi-Chip Product (MCP) packages and consists of:

■ Burst Simultaneous Operation, Multiplexed NOR Flash Memory.

■ Burst Mode, Multiplexed Pseudo SRAM.

For detailed specifications, Please refer to the individual datasheets listed in the following table.

Device

Document

NOR Flash Memory

EN29NS032

Pseudo SRAM

ENPSS16

Flash Density

32Mb

pSRAM density

16Mb

Flash Access time

70ns at Async. Mode

7ns at Burst Read

pSRAM Access time

70ns at Async. Mode

7ns at Burst Read

Flash Burst mode

max frequency

108MHz

pSRAM Burst mode

max frequency

108MHz

Package

56-ball BGA

EN71NS032A0

Stacked Multi-Chip Product (MCP) Flash Memory and RAM

32 Megabit (2M x 16-bit) CMOS 1.8 Volt-only Burst Simultaneous

Operation, Multiplexed Flash Memory and

16 Megabit (1M x 16-bit) Pseudo Static RAM