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EN39SL800 Datasheet(PDF) 1 Page - Eon Silicon Solution Inc.

Part No. EN39SL800
Description  8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
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Maker  EON [Eon Silicon Solution Inc.]
Homepage  http://www.essi.com.tw
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EN39SL800 Datasheet(HTML) 1 Page - Eon Silicon Solution Inc.

 
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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
1
EN39SL800
Rev. H, Issue Date: 2011/02/14
FEATURES
• Single power supply operation
- Full voltage range: 1.65-1.95 volt for read and
write operations.
- Ideal for battery-powered applications.
• High performance
- Access times as fast as 70 ns
• Low power consumption (typical values at 5
MHz)
- 5 mA typical active read current
- 15 mA typical program/erase current
- 0.2
μA typical standby current
• Uniform Sector Architecture:
- 256 sectors of 2-Kword
- 16 blocks of 32-Kword
- Any sector or block can be erased individually
• Block protection:
-
Hardware locking of blocks to prevent
program or erase operations within
individual blocks
• Chip Unprotect Mode
• High performance program/erase speed
- Word program time: 8µs typical
- Sector erase time: 90ms typical
- Block erase time: 180ms typical
- Chip erase time: 2s typical
• JEDEC Standard Embedded Erase and
Program Algorithms
• JEDEC standard DATA# polling and toggle
bits feature
• Single Sector, Block and Chip Erase
• Erase Suspend / Resume modes:
Read or program another Sector/Block during
Erase Suspend Mode
• Low Vcc write inhibit < 1.2V
• Minimum 100K endurance cycle
• Package Options
- 48-ball 6mm x 8mm TFBGA
- 48-ball 4mm x 6mm WFBGA
• Industrial temperature Range
GENERAL DESCRIPTION
The EN39SL800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 524,288 words. Any word can be programmed typically in 8µs.The EN39SL800 features 1.8V
voltage read and write operation, with access time as fast as 70ns to eliminate the need for WAIT
statements in high-performance microprocessor systems.
The EN39SL800 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls,
which eliminate bus contention issues. This device is designed to allow either single Sector/Block or full
chip erase operation, where each block can be individually protected against program/erase operations or
chip unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on
each sector or block.
EN39SL800
8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector,
CMOS 1.8 Volt-only


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