EN39SL800_11 datasheet(29/45 Pages) EON

Part #	EN39SL800

Description	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only

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Manufacturer	EON [Eon Silicon Solution Inc.]

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This Data Sheet may be revised by subsequent versions

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29

EN39SL800

Rev. H, Issue Date: 2011/02/14

Table 12. AC CHARACTERISTICS

(Ta = - 40°C to 85°C; VCC = 1.65-1.95V)

Write (Erase/Program) Operations

Parameter

Symbols

Speed Options

JEDEC

Standard

Description

-70

Unit

tAVAV

tWC

Write Cycle Time (Note 1)

Min

70

ns

tAVWL

tAS

Address Setup Time

Min

0

ns

tWLAX

tAH

Address Hold Time

Min

45

ns

tDVWH

tDS

Data Setup Time

Min

30

ns

tWHDX

tDH

Data Hold Time

Min

0

ns

tOES

Output Enable Setup Time

Min

0

ns

tGHWL

Read Recovery Time before Write

(OE# High to WE# Low)

Min

0

ns

tELWL

tCS

CE# Setup Time

Min

0

ns

tWHEH

tCH

CE# Hold Time

Min

0

ns

tWLWH

tWP

Write Pulse Width

Min

35

ns

tWHDL

tWPH

Write Pulse Width High

Min

20

ns

tWHWH1 tWHWH1

Word Programming Operation (Note 2)

Typ

8

µs

Sector

Typ

0.09

s

Block

Typ

0.18

s

tWHWH2

tWHWH2 Erase Operation (Note 2)

Chip

Typ

2

s

tVCS

Vcc Setup Time (Note 1)

Min

50

µs

tVT

Voltage Transition Time

Min

500

ns

tWPP1

Block Pulse Width

Min

100

μs

tWPP2

Chip Unprotection Pulse Width

Min

10

ms

tST

Voltage setup time

Min

4

μs

Notes:

1. Not 100% tested.

2. See Erase and Programming Performance for more information.

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