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EN39SL800 Datasheet(PDF) 26 Page - Eon Silicon Solution Inc.

Part No. EN39SL800
Description  8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
Download  45 Pages
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Maker  EON [Eon Silicon Solution Inc.]
Homepage  http://www.essi.com.tw
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EN39SL800 Datasheet(HTML) 26 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
26
EN39SL800
Rev. H, Issue Date: 2011/02/14
Table 10. DC Characteristics
(Ta = - 40°C to 85°C; VCC = 1.65-1.95V)
Notes
1. Maximum I
B
CC
B
specifications are tested with Vcc = Vcc max.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ Vcc
±3
µA
ILO
Output Leakage Current
0V
≤ VOUT ≤ Vcc
±3
µA
ICC1
Active Read Current
CE# = VIL, OE# = VIH,
F=5MHz
5
10
mA
ICC2
Supply Current (Standby)
CE# = Vcc,
Vcc
= Vcc max
0.2
5.0
µA
ICC3
Supply Current (Program or Erase)
Program or Erase in
progress
15
25
mA
ICC4
Automatic Sleep Mode
VIH = Vcc ± 0.2 V
VIL = Vss ± 0.2 V
0.2
5.0
µA
VIL
Input Low Voltage
-0.5
0.3 x
VCC
V
VIH
Input High Voltage
0.7 x
Vcc
Vcc +
0.3
V
VOL
Output Low Voltage
IOL = 100 μA
0.1
V
VOH
Output High Voltage
IOH = -100 μA,
Vcc -
0.1
V
VID
A9 Voltage (Electronic Signature)
9.0
10.0
11.0
V
IID
A9 Current (Electronic Signature)
A9 = VID
50
µA
VLKO
Supply voltage (Erase and
Program lock-out)
1.2
1.5
V


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