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EN39SL800 Datasheet(PDF) 16 Page - Eon Silicon Solution Inc.

Part No. EN39SL800
Description  8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
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Maker  EON [Eon Silicon Solution Inc.]
Homepage  http://www.essi.com.tw
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EN39SL800 Datasheet(HTML) 16 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
16
EN39SL800
Rev. H, Issue Date: 2011/02/14
The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. See “Write
Operation Status” for information on these status bits. When the Embedded Erase algorithm is complete,
the device returns to reading array data and addresses are no longer latched.
Flowchart 4 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in
“AC Characteristics” for parameters, and to the Chip, Sector/Block Erase Operation Timings for timing
waveforms.
Sector/Block Erase Command Sequence
Sector/Block erase is a six bus cycle operation. The sector/block erase command sequence is initiated by
writing two un-lock cycles, followed by a set-up command. Two additional unlock write cycles are then
followed by the address of the sector/block to be erased, and the sector/block erase command. The
Command Definitions table shows the address and data requirements for the sector/block erase
command sequence.
Once the sector/block erase operation has begun, only the Erase Suspend command is valid. All other
commands are ignored.
When the Embedded Erase algorithm is complete, the device returns to reading array data and
addresses are no longer latched. The system can determine the status of the erase operation by using
DQ7, DQ6, or DQ2. Refer to “Write Operation Status” for information on these status bits. Flowchart 4
illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in the “AC
Characteristics” section for parameters, and to the Sector/Block Erase Operations Timing diagram for
timing waveforms.
Erase Suspend / Resume Command
The Erase Suspend command allows the system to interrupt a sector/block erase operation and then
read data from, or program data to, any sector/block not selected for erasure. This command is valid only
during the sector/block erase operation. The Erase Suspend command is ignored if written during the chip
erase operation or Embedded Program algorithm. Addresses are don’t-cares when writing the Erase
Suspend command.
When the Erase Suspend command is written during a sector/block erase operation, the device requires
a maximum of 20 µs to suspend the erase operation.
After the erase operation has been suspended, the system can read array data from or program data to
any sector/block not selected for erasure. (The device “erase suspends” all sector/blocks selected for
erasure.) Normal read and write timings and command definitions apply. Reading at any address within
erase-suspended sectors/blocks produces status data on DQ7–DQ0. The system can use DQ7, or DQ6
and DQ2 together, to determine if a sector/block is actively erasing or is erase-suspended. See “Write
Operation Status” for information on these status bits.
After an erase-suspended program operation is complete, the system can once again read array data
within non-suspended sectors/blocks. The system can determine the status of the program operation
using the DQ7 or DQ6 status bits, just as in the standard program operation. See “Write Operation
Status” for more information. The Autoselect command is not supported during Erase Suspend Mode.
The system must write the Erase Resume command (address bits are don’t-care) to exit the erase
suspend mode and continue the sector/block erase operation. Further writes of the Resume command
are ignored. Another Erase Suspend command can be written after the device has resumed erasing.


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