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EN29PL032A Datasheet(PDF) 43 Page - Eon Silicon Solution Inc.

Part # EN29PL032A
Description  32 Mbit (2 M x 16-Bit) CMOS 3.0 Volt- only, Simultaneous-Read/Write Flash Memory
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Manufacturer  EON [Eon Silicon Solution Inc.]
Direct Link  http://www.essi.com.tw
Logo EON - Eon Silicon Solution Inc.

EN29PL032A Datasheet(HTML) 43 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
43
EN29PL032A
Rev. B, Issue Date: 2010/12/27
20.6
Erase/Program Operations
Table 20.5
Erase and Program Operations
Parameter
Speed Options (ns)
JEDEC
Std
Description
70
Unit
tAVAV
tWC Write Cycle Time (Note 1)
Min
70
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
35
ns
tAHT Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
30
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH Output Enable High during toggle bit polling
Min
10
ns
tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP Write Pulse Width
Min
35
ns
tWHDL
tWPH Write Pulse Width High
Min
25
ns
tSR/W Latency Between Read and Write Operations
Min
0
ns
tWHWH 1 tWHW H1 Programming Operation (Note 2)
Typ
8
µs
tWHWH 1 tWHW H1 Accelerated Programming Operation (Note 2)
Typ
7
µs
tWHWH 2 tWHW H2 Sector Erase Operation (Note 2)
Typ
0.1
sec
tVCS VCC Setup Time (Note 1)
Min
50
µs
tRB
Write Recovery Time from RY/BY#
Min
0
ns
Max
90
ns
tBUSY Program/Erase Valid to RY/BY# Delay
Min
35
ns
tPSL Program Suspend Latency
Max
35
µs
tESL Erase Suspend Latency
Max
35
µs
Notes:
1.
Not 100% tested.
2.
See Table 21.4 for more information.


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