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EN29GL256H Datasheet(PDF) 1 Page - Eon Silicon Solution Inc.

Part No. EN29GL256H
Description  256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
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Maker  EON [Eon Silicon Solution Inc.]
Homepage  http://www.essi.com.tw
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EN29GL256H Datasheet(HTML) 1 Page - Eon Silicon Solution Inc.

 
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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
1
EN29GL256H/L
Rev. G, Issue Date: 2011/01/17
FEATURES
• Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
• High performance
- Access times as fast as 90 ns
• VIO Input/Output 1.65 to 3.6 volts
- All input levels (address, control, and DQ input
levels) and outputs are determined by voltage
on VIO input. VIO range is 1.65 to VCC
• 8-word/16-byte page read buffer
• 32-word/64-byte write buffer reduces overall
programming time for multiple-word updates
• Secured Silicon Sector region
- 128-word/256-byte sector for permanent,
secure identification through an 8-word/16-
byte random Electronic Serial Number
- Can be programmed and locked at the factory
or by the customer
• Uniform 64Kword/128KByte Sector
Architecture Two hundred fifty-six sectors
• Suspend and Resume commands for
Program and Erase operations
• Write operation status bits indicate program
and erase operation completion
• Support for CFI (Common Flash Interface)
• Persistent methods of Advanced Sector
Protection
• WP#/ACC input
- Accelerates programming time (when VHH is
applied) for greater throughput during system
production
- Protects first or last sector regardless of
sector protection settings
• Hardware reset input (RESET#) resets
device
• Ready/Busy# output (RY/BY#) detects
program or erase cycle completion
• Minimum 100K program/erase endurance
cycles.
• Package Options
- 56-pin TSOP
- 64-ball 11mm x 13mm BGA
• Industrial Temperature Range.
GENERAL DESCRIPTION
The EN29GL256 offers a fast page access time of 25 ns with a corresponding random access time as
fast as 90 ns. It features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed
in one operation, resulting in faster effective programming time than standard programming algorithms.
This makes the device ideal for today’s embedded applications that require higher density, better
performance and lower power consumption.
EN29GL256
256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory
Page mode Flash Memory, CMOS 3.0 Volt-only


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