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EN29GL256H Datasheet(PDF) 57 Page - Eon Silicon Solution Inc.

Part No. EN29GL256H
Description  256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
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Maker  EON [Eon Silicon Solution Inc.]
Homepage  http://www.essi.com.tw
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EN29GL256H Datasheet(HTML) 57 Page - Eon Silicon Solution Inc.

 
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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
57
EN29GL256H/L
Rev. G, Issue Date: 2011/01/17
Revisions List
Revision No Description
Date
A
Preliminary
2009/02/18
B
1. Add internal pull-up description for WP# pin in Table1 on Page 4
2. Add WP#/ACC, VIO pin in Figure3 on Page 4
3. Modify tOE from 30ns to 25ns in Table 17 on page 40 and Page 5
4. Add Secured Silicon Sector Entry/Exit command in Table13
5. Modify typo from Sector Erase Suspend to Erase/Program Suspend,
from Sector Erase Resume to Erase/Program resume in Table13
6. Modify package code for 56-pin TSOP from T to Z in ordering
information on Page 57
7. Del table 22 and Figure 20 Temporary Sector Unprotect Timing table and
Diagram and Figure 21.Sector Protect/Unprotect Timing Diagram
8. Modify Erase/Program performance in Table 20, 21 and 22.
Chip erase time from 64 60sec typ and 560 240sec max.
Add ACC and total write buffer time spec
9. Del tCEH on table 17
10. Modify DC Characteristics in table 15
VHH from 10.5~11.5V to 8.5~9.5V
ICC1 5MHz 9 15mA typ, 10MHz 16 25mA typ
ICC4, ICC5 and ICC6 1 1.5uA typ, 5 10uA max
Add IIO2 and IACCspec
11. Del apply VID on address pin A9 to access autoselect codes function.
( Remove TABLE 5 and modify description Autoselect section for using
High voltage to get Autoselect Codes )
12. Modify A9 spec from 9.5V to Vcc+0.5V in ABSOLUTE MAXIMUM
RATINGS
13. Modify CFI 4Ah, 4Fh description and data of 4Fh in table 12
14. Modify CFI data for address 27h and 2Dh.
15. Modify typo Sector Architecture 128 to 256 sectors on page1
16. Modify typo Byte mode to Word mode on page7
2009/05/12
C
1. Modify naming for DQ0 OTP Lock Bit to Secured Silicon Sector
Protection Bit on Page 28
2. Modify Table.8 Secured Silicon Sector Address Range 000000h-
000007h from Determined by customer to Reserve for Factory
3. Add note “The address 0h~7h in Secured Silicon Sector is reserved
for Factory“ on Page 34
4. Update FIGURE 21. 64 ball Fortified Ball Grid Array (FBGA), 11 X13 mm,
Pitch 1mm package outline on page 55
5. Modify from Sector 0 to all sectors in note 1 of Table 6 and note 2, 3 and
note 9 of PPB section on page 28
6. Add “User only can use DQ6 and RY/BY# pin to detect programming
status” in note 10 on page29
2009/7/14
D
Change the package code of 64-ball BGA on page 56.
2009/07/22
E
1. Correct typo in Table 20, “
t
B
BUSY from Min. to Max on page 45.
2. Add a note "when sector SA0 is suspended, if system enters Secured
Sector mode,..." on page 32.
2010/01/26
F
1. Add Write Buffer byte mode command and note that maximum value is 31
for word and byte mode in page 37.
2. Change the speed option from 70ns to 90ns, and modify related
parameter for 90ns speed.
2010/03/31
G
Update the
Output Load Capacitance from 100pF to 30pF on page 40
and 41.
2011/01/17


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