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EN29GL256H Datasheet(PDF) 51 Page - Eon Silicon Solution Inc.

Part No. EN29GL256H
Description  256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
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Maker  EON [Eon Silicon Solution Inc.]
Homepage  http://www.essi.com.tw
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EN29GL256H Datasheet(HTML) 51 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
51
EN29GL256H/L
Rev. G, Issue Date: 2011/01/17
TABLE 22. ERASE AND PROGRAMMING PERFORMANCE
Limits
Parameter
Typ
Max
Unit
Comments
Sector Erase Time
0.1
2
sec
Chip Erase Time
60
240
sec
Excludes 00h programming prior
to erasure
Byte Programming Time
8
200
µs
Word Programming Time
8
200
µs
Byte
268.8
806.4
Chip Programming
Time
Word
134.4
403.2
sec
Total Write Buffer time
160
ACC Total Write Buffer time
60
µs
Excludes system level overhead
Erase/Program Endurance
100K
cycles
Minimum 100K cycles
Notes:
1. Typical program and erase times assume the following conditions: room temperature, 3V and checkboard
pattern programmed.
2. Maximum program and erase times assume the following conditions: worst case Vcc, 90°C and 100,000 cycles.
Table 23. 56-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Note:
Test conditions are Temperature = 25°C and f = 1.0 MHz.
Table 24. DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
Data Retention Time
125°C
20
Years


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