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EN29GL256H Datasheet(PDF) 39 Page - Eon Silicon Solution Inc.

Part No. EN29GL256H
Description  256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
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Maker  EON [Eon Silicon Solution Inc.]
Homepage  http://www.essi.com.tw
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EN29GL256H Datasheet(HTML) 39 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
39
EN29GL256H/L
Rev. G, Issue Date: 2011/01/17
Table 15. DC Characteristics
(Ta = - 40°C to 85°C; VCC = 2.7-3.6V)
Notes:
1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that they draw power if not
at full CMOS supply voltages.
2. Maximum ICC specifications are tested with Vcc = Vcc max.
3. Not 100% tested.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ Vcc
±5
µA
ILO
Output Leakage Current
0V
≤ VOUT ≤ Vcc
±1
µA
5MHz
15
30
mA
ICC1
VCC Active Read Current
CE# = VIL; OE# = VIH ;
VCC = VCC max
10MHz
25
45
mA
IIO2
VIO Non-Active Output
CE# = VIL , OE# = VIH
0.2
10
mA
CE# = VIL , OE# = VIH , VCC =
VCCmax, f = 10 MHz
1
10
ICC2
VCC Intra-Page Read
Current
CE# = VIL , OE# = VIH , VCC =
VCCmax, f = 33 MHz
5
15
mA
ICC3
VCC Active Erase/
Program Current
CE# = VIL , OE# = VIH , VCC = VCCmax
20
30
mA
ICC4
VCC Standby Current
CE#, RESET# = VCC ± 0.3 V,
OE# = VIH , VCC = VCC max
VIL = Vss + 0.3 V/-0.1V,
1.5
10
µA
ICC5
VCC Reset Current
RESET# = Vss ± 0.3V
1.5
10
µA
ICC6
Automatic Sleep Mode
VIH = Vcc ± 0.3V
VIL = Vss ± 0.3V
1.5
10
µA
WP#/ACC
pin
3
10
IACC
ACC Accelerated Program
Current
CE# = VIL, OE# = VIH,
VCC = VCCmax,
WP#/ACC = VHH
VCC pin
15
30
mA
VIL
Input Low Voltage
-0.5
0.3 x
VIO
V
VIH
Input High Voltage
0.7 x
VIO
VIO +
0.3
V
VHH
Acceleration Program
Voltage
8.5
9.5
V
VOL
Output Low Voltage
IOL = 100μA
0.15 x
VIO
V
VOH
Output High Voltage
CMOS
IOH = -100μA
0.85 x
VIO
V
VLKO
Supply voltage (Erase and
Program lock-out)
2.3
2.5
V


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