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EN29GL256H Datasheet(PDF) 35 Page - Eon Silicon Solution Inc.

Part No. EN29GL256H
Description  256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
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Maker  EON [Eon Silicon Solution Inc.]
Homepage  http://www.essi.com.tw
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EN29GL256H Datasheet(HTML) 35 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
35
EN29GL256H/L
Rev. G, Issue Date: 2011/01/17
Table 9. CFI Query Identification String
Addresses
(Word Mode)
Data
Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 10. System Interface String
Addresses
(Word Mode)
Data
Description
1Bh
0027h
Vcc Min (write/erase)
DQ7-DQ4: volt, DQ3-DQ0: 100mV
1Ch
0036h
Vcc Max (write/erase)
DQ7-DQ4: volt, DQ3-DQ0: 100mV
1Dh
0000h
Vpp Min voltage (00h = no Vpp pin present)
1Eh
0000h
Vpp Max voltage (00h = no Vpp pin present)
1Fh
0003h
Typical timeout per single byte/word write 2
N µs
20h
0004h
Typical timeout for min size buffer write 2
N µs (00h = not supported)
21h
0009h
Typical timeout per individual block erase 2
N ms
22h
0000h
Typical timeout for full chip erase 2
N ms (00h = not supported)
23h
0005h
Max timeout for byte/word write 2
N times typical
24h
0005h
Max timeout for buffer write 2
N times typical
25h
0004h
Max timeout per individual block erase 2
N times typical
26h
0000h
Max timeout for full chip erase 2
N times typical (00h = not supported)
Table 11. Device Geometry Definition
Addresses
(Word mode)
Data
Description
27h
0019h
Device Size = 2
N bytes. 2**25=32MB=256Mb
28h
29h
0002h
0000h
Flash Device Interface Description (refer to CFI publication 100);
01h = X16 only; 02h = x8/x16
2Ah
2Bh
0006h
0000h
Max number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
0001h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
00FFh
0000h
0000h
0002h
Erase Block Region 1 Information
(refer to the CFI specification of CFI publication 100)
256 uniform sectors (7Fh + 1)
31h
32h
33h
34h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
(refer to the CFI specification of CFI publication 100)
35h
36h
37h
38h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
(refer to the CFI specification of CFI publication 100)


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