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EN29GL256H Datasheet(PDF) 27 Page - Eon Silicon Solution Inc.

Part No. EN29GL256H
Description  256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
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Maker  EON [Eon Silicon Solution Inc.]
Homepage  http://www.essi.com.tw
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EN29GL256H Datasheet(HTML) 27 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
27
EN29GL256H/L
Rev. G, Issue Date: 2011/01/17
all PPB erase command, DQ3 outputs a ‘1’ when the lock register bits are read. Likewise the DQ4 bit is
also programmed in the EON Factory. DQ4 is the bit which indicates whether Volatile Sector Protection
Bit (DYB) is protected or not after boot-up. When the device is programmed to set all Volatile Sector
Protection Bit protected after power-up, DQ4 outputs a ‘0’ when the lock register bits are read. Similarly,
when the device is programmed to set all Volatile Sector Protection Bit unprotected after power-up,
DQ4 outputs a ‘1’. Each of these bits in the lock register are non-volatile. DQ15- DQ5 are reserved and
will be 1’s.
Table 6. Lock Register
DQ15-5
DQ4
DQ3
DQ2
DQ1
DQ0
Reserved DYB Lock Boot Bit
PPB One Time
Programmable Bit
Reserved
Persistent
Protection Mode
Lock Bit
Secured
Silicon Sector
Protection Bit
(default = 1)
0 = protected all
DYB after boot-up
1 = unprotected all
DYB after boot-up
(default = 1)
0 = All PPB Erase
Command disabled
1 = All PPB Erase
Command enabled
(default = 1)
(default = 1)
0 = Persistent
Protection enabled
(default = 0)
0 = protected
1 = unprotect
(default = 1)
Notes:
1. After the Lock Register Bits Command Set Entry command sequence is written, reads and writes for all Sector are disabled,
while reads from other sectors are allowed until exiting this mode.
2. Only DQ0 could be change by Lock Register Bits Command for user. Others bits were set by Factory.
After selecting a sector protection method, each sector can operate in any of the following three states:
1. Constantly locked: The selected sectors are protected and can not be reprogrammed unless PPB
lock bit is cleared via hardware reset, or power cycle.
2. Dynamically locked: The selected sectors are protected and can be altered via software commands.
3. Unlocked: The sectors are unprotected and can be erased and/or programmed.
Persistent Protection Bits
The Persistent Protection Bits are unique and nonvolatile. For Sector 0~3 and 252~255 have one PPB
for each sectors and for Sector 4~251 have one PPB every four sectors (refer to Figure 7 and Table 3.
Sector / Persistent Protection Sector Group Address Tables) and have the same endurances as the
Flash memory. Preprogramming and verification prior to erasure are handled by the device, and
therefore do not require system monitoring.
Notes
1. Each PPB is individually programmed and all are erased in parallel.
2. While programming PPB for the four sectors and Data polling on programming PPB address, array
data can not be read from any sectors.
3. Entry command disables reads and writes for all sectors selected.
4. Reads within that sector return the PPB status for that sector.
5. All Reads must be performed using the read mode.
6. The specific sector address are written at the same time as the program command.
7. If the PPB Lock Bit is set, the PPB Program or erase command does not execute and times-out
without programming or erasing the PPB.
8. There are no means for individually erasing a specific PPB and no specific sector address is
required for this operation.
9. Exit command must be issued after the execution which resets the device to read mode and re-
enables reads and writes for all sectors.
10. The programming state of the PPB for given sectors can be verified by writing a PPB Status Read
Command to the device as described by the flow chart shown in Figure 8. User only can use DQ6
and RY/BY# pin to detect programming status.


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