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MCM6926A Datasheet(PDF) 2 Page - Motorola, Inc

Part # MCM6926A
Description  128K x 9 Bit Fast Static Random Access Memory
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MCM6926A Datasheet(HTML) 2 Page - Motorola, Inc

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MCM6926A
2
MOTOROLA FAST SRAM
TRUTH TABLE (X = Don’t Care)
E
G
W
Mode
VDD Current
Output
Cycle
H
X
X
Not Selected
ISB1, ISB2
High–Z
L
H
H
Output Disabled
IDDA
High–Z
L
L
H
Read
IDDA
Dout
Read Cycle
L
X
L
Write
IDDA
High–Z
Write Cycle
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage
VDD
– 0.5 to + 4.6
V
Voltage Relative to VSS for Any Pin
Except VDD
Vin, Vout
– 0.5 to VDD + 0.5
V
Output Current
Iout
± 30
mA
Power Dissipation
PD
0.6
W
Temperature Under Bias
Tbias
– 10 to + 85
°C
Operating Temperature
TA
0 to + 70
°C
Storage Temperature — Plastic
Tstg
– 55 to + 125
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage (Operating Voltage Range)
VDD
3.135
3.3
3.6
V
Input High Voltage
VIH
2.2
VDD + 0.3**
V
Input Low Voltage
VIL
– 0.5
*
0.8
V
*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA.
** VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 2 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA.
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VDD)
Ilkg(I)
± 1.0
µA
Output Leakage Current (E = VIH, Vout = 0 to VDD)
Ilkg(O)
± 1.0
µA
Output Low Voltage (IOL = + 8.0 mA)
VOL
0.4
V
Output High Voltage (IOH = – 4.0 mA)
VOH
2.4
V
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to these high–impedance
circuits.
This BiCMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.


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